Skip to main content Accessibility help

Study of the Amorphous-to-Microcrystalline Transition during Silicon Film Growth at Increased Rates: Extensions of the Evolutionary Phase Diagram

  • Andre S. Ferlauto (a1), Pablo I. Rovira (a1), Randy J. Koval (a1), Christopher R. Wronski (a1) and Robert W. Collins (a1)...


The microstructural and phase evolution of silicon films (Si:H) prepared by low temperature (200°C) rf plasma-enhanced chemical vapor deposition (PECVD) with hydrogen dilution of silane has been studied using real time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM). Both RTSE and AFM support the concept of an evolutionary phase diagram that describes different regimes of bulk layer thickness and H2-dilution ratio R within which predominantly amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) films are obtained. In this study, the evolutionary phase diagram has been extended to identify four separate growth regimes: (i) a-Si:H with a smooth surface and a stable roughness layer thickness, (ii) a-Si:H with a rougher surface and an unstable roughness layer thickness, (iii) mixed-phase (a+μc)-Si:H, and (iv) fully-coalesced (single-phase) μc-Si:H. Based on this framework, the effect of increased rf power to achieve higher deposition rates in the rf PECVD process was investigated.



Hide All
1. Matsuda, A. and Tanaka, K., J. Non-Cryst. Solids 97&98, 1367 (1987).
2.See for example, Bennett, M., Rajan, K., and Kritikson, K., Conf. Record 23rd IEEE Photovoltaics Specialists Conference (IEEE, New York, 1993), p. 845.
3. Lu, Y., Kim, S., Gunes, M., Lee, Y., Wronski, C.R., and Collins, R.W., Mater. Res. Soc. Symp. Proc. 336, 595 (1994).
4. Tsu, D., Chao, B., Ovshinsky, S., Guha, S., and Yang, J., Appl. Phys. Lett. 71, 1317 (1997).
5. Koh, J., Lee, Y., Fujiwara, H., Wronski, C.R., and Collins, R.W., Appl. Phys. Lett. 73, 1526 (1998).
6. Koh, J., Ferlauto, A. S., Rovira, P. I., Wronski, C. R., and Collins, R. W., Appl. Phys. Lett. 75, 2286 (1999).
7. Collins, R. W., An, I., Fujiwara, H., Lee, J., Lu, Y., Koh, J., and Rovira, P. I., Thin Solid Films, 313–314, 18 (1998).
8. Li, Y.M., An, I., Nguyen, H.V., Wronski, C.R., and Collins, R. W., Phys. Rev. Lett. 68, 2814 (1992).
9. Ganguly, G. and Matsuda, A., Phys. Rev. B 47, 3661 (1993).
10. Rezek, B., Stuchlík, J., Fejfar, A., and Kocka, J., Appl. Phys. Lett. 74, 1475 (1999).
11. Takagi, T., Hayashi, R., Ganguly, G., Kondo, M., Matsuda, A., Thin Solid Films 345, 75 (1999).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed