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Study of Structural Defects in CdZnTe Crystals by High Resolution Electron Microscopy

  • A. Hossain (a1), A. E. Bolotnikov (a1), G. S. Camarda (a1), Y. Cui (a1), R. Gul (a1), K-H. Kim (a1), K. Kisslinger (a1), D. Su (a1), G. Yang (a1), L. H. Zhang (a1) and R. B. James (a1)...

Abstract

We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.

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Keywords

Study of Structural Defects in CdZnTe Crystals by High Resolution Electron Microscopy

  • A. Hossain (a1), A. E. Bolotnikov (a1), G. S. Camarda (a1), Y. Cui (a1), R. Gul (a1), K-H. Kim (a1), K. Kisslinger (a1), D. Su (a1), G. Yang (a1), L. H. Zhang (a1) and R. B. James (a1)...

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