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Study of Strain Relaxation in Epitaxial Structure Ge0.2 Si0.8/Si At Thermo-Implantation Treatment by Ion Beam Channeling
Published online by Cambridge University Press: 10 February 2011
Abstract
Strain relaxation in epitaxial Si-Ge structures induced by ion beam bombardment has been studied using a He+ channeling technique. It is shown that hot ion beam bombardment (230°C, Si+ ions with energy 200 keV and fluence 6·1013 ion/cm2) of thin strained Si-Ge layers results in partial strain relaxation. A model of the strain relaxation induced by radiation damage is proposed.
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- Copyright © Materials Research Society 2000
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