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Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k

Published online by Cambridge University Press:  10 February 2011

S. Bidnyk ,
Y. H. Cho ,
T. J. Schmidt ,
J. Krasinski ,
J. J. Song ,
S. Keller ,
U. K. Mishra  and
S. P. Denbaars
S. Bidnyk
Affiliation:
Oklahoma State Univ., Center for Laser and Photonics Research and Dept. of Physics, Stillwater, OK.
Y. H. Cho
Affiliation:
Oklahoma State Univ., Center for Laser and Photonics Research and Dept. of Physics, Stillwater, OK.
T. J. Schmidt
Affiliation:
Oklahoma State Univ., Center for Laser and Photonics Research and Dept. of Physics, Stillwater, OK.
J. Krasinski
Affiliation:
Oklahoma State Univ., Center for Laser and Photonics Research and Dept. of Physics, Stillwater, OK.
J. J. Song
Affiliation:
Oklahoma State Univ., Center for Laser and Photonics Research and Dept. of Physics, Stillwater, OK.
S. Keller
Affiliation:
Univ. of California, Electrical & Computer Engineering and Materials Dept., Santa Barbara, CA.
U. K. Mishra
Affiliation:
Univ. of California, Electrical & Computer Engineering and Materials Dept., Santa Barbara, CA.
S. P. Denbaars
Affiliation:
Univ. of California, Electrical & Computer Engineering and Materials Dept., Santa Barbara, CA.
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Abstract

We present the results of an experimental study on stimulated emission (SE) in optically pumped InGaN/GaN multi-quantum well (MQW) structures in the temperature range of 175 K to 575 K. Samples used in this work consisted of 12 QWs and the GaN barriers were intentionally doped with different Si concentrations. The effect of doping on the SE thresholds of the MQWs were investigated. We observed that the SE spectra were comprised of many narrow peaks of less than I Å full width at half maximum (FWHM). No broadening of the FWHMs of the peaks occurred as the temperature was raised from 175 to 575 K. The SE threshold was measured as a function of temperature and compared with that of a thin GaN film. Low SE thresholds were attributed to high quantum efficiency of the MQWs, possibly associated with large carrier localization. A characteristic temperature of 162 K was derived from the temperature dependence of the SE threshold. The integrated emission intensity versus pumping density was examined for different temperatures. This study shows that InGaN/GaN MQWs are suitable for the development of laser diodes that can operate well above room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 199
Copyright
Copyright © Materials Research Society 1998

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References

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