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Study of SiF4-N2-H2 Plasmas for the Deposition of Fluorinated Silicon Nitride Films

  • G. Cicala (a1), G. Bruno (a1), P. Capezzuto (a1) and M. Losurdo (a1)

Abstract

Radiofrequency glow discharges, operating under various conditions, have been used to deposit hydrogenated and fluorinated silicon nitride (a-Si,N:H,F) from SiF4-N2-H2 gas mixtures. The effect of the feeding mixture composition has been investigated in order to establish the optimum deposition conditions for stable silicon nitride. High H2-dilution of the feeding mixture has been found to produce transparent (Eg>5.6eV) and stoichiometric (N/Si=1.3) films.

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Study of SiF4-N2-H2 Plasmas for the Deposition of Fluorinated Silicon Nitride Films

  • G. Cicala (a1), G. Bruno (a1), P. Capezzuto (a1) and M. Losurdo (a1)

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