As gate oxide thickness decreases, the capacitance associated with the depleted layer in polysilicon gate becomes significant, making it necessary to consider alternative gate electrodes. Titanium nitride (TiN) films elaborated with TiCl4 precursor is widely studied as metal gate in semi-conductor technology. In this work, a study of TiN metal gate deposited by MOCVD using TDMAT (Tetrakisdimethylamino titanium) precursor is proposed. N2, H2 plasma application and SiH4 treatment after TiN thin film growth modify composition and microstructure. Consequently, they alter the physical properties of films. Such treatments may be a way to modulate work function and thus to control threshold voltage.
Metallic layers were deposited in a chamber using a commercial 8 inch wafer deposition tool. In this study, structural and compositional properties of TiN were correlated with work function measurements. Firstly, the composition evolution (carbon content) was studied by AES and SIMS as a function of plasma and SiH4 treatments; XRD gave details on the microstructure. Secondly, MOS structures were processed on uniformly p-type doped wafers. C-V curves of capacitors were used to estimate the flat band voltage (VFB) and gave access to the work function, the effect of oxide fixed charges and the density of interface states. It is shown that as-deposited amorphous films exhibit a work function of 4.4 eV. Exposure to SiH4 is shown to increase this work function of about 150 meV. Thin films properties are not impacted by anneal treatments. Work function stability was tested at 425 °C, 900 °C and 1050 °C. Thermodynamic compatibility with gate oxide was verified thanks to experimental results and calculations.