Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-10T09:23:37.954Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Enhanced Solid Phase Epitaxy of Amorphous Silicon with Low Concentrations of Implanted Phosphorous

Published online by Cambridge University Press:  25 February 2011

Young- Jin Jeon ,
Won Woo Park ,
M. F. Becker  and
Rodger. M. Walser
Young- Jin Jeon
Affiliation:
Center for Materials Science and Engineering, The University of Texas, Austin, TX 78712, U.S.A.
Won Woo Park
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, U.S.A.
M. F. Becker
Affiliation:
Center for Materials Science and Engineering, The University of Texas, Austin, TX 78712, U.S.A. Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, U.S.A.
Rodger. M. Walser
Affiliation:
Center for Materials Science and Engineering, The University of Texas, Austin, TX 78712, U.S.A. Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, U.S.A. J. H. Herring Centennial Professor in Engineering
Get access

Abstract

In this work we measured the functional dependence of the solid phase epitaxial (SPE) regrowth of amorphous silicon on the implanted phosphorous concentration, Np. The growth rates of self-ion amorphized layers in silicon wafers with (100) substrate orientation were measured by in situ, high precision, isothermal cw laser interferometry for temperatures from 460°C to 590°C, and concentrations in the range 2x1017 cm-3<Np<4x1020 cm-3. For low impurity concentrations, the fractional increase in the intrinsic SPE growth velocity ΔV/Vi depended linearly on Np as previously established for boron. For a given impurity concentration, the relative change V/Vi decreased with increasing annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 551
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Olson, G.L. and Roth, J.A., Materials Science Reports 3(1), 1–78 (1988).Google Scholar
2. Hung, L.S., Lau, S.S., von Allmen, M., Mayer, J.W., Ullrich, B.M., Baker, J.E., Williams, P., and Tseng, W.F., Appl. Phys. Lett. 37, 909 (1980).Google Scholar
3. Kunii, Y., Tabe, M., and Kajiyama, K., Jpn. J. Appl. Phys. 21, 1431 (1982).Google Scholar
4. Ozturk, M.C., Wortman, J.J., and Fair, R.B., Appl. Phys. Lett. 52(12), 963 (1988).Google Scholar
5. Kunii, Y., Tabe, M., and Kajiyama, K., J. Appl. Phys. 54, 2847 (1983).Google Scholar
6. Shannon, J.M. and Goldsmith, B.J., Thin Solid Films 89, 21 (1982).Google Scholar
7. Lietoila, A., Wakita, A., Sigmon, T.W., and Gibbons, J.F., J. Appl. Phys. 53(6), 4399 (1982).Google Scholar
8. Suni, I., Goltz, G., Grimaldi, M.G., and Nicolet, M-A., Appl. Phys. Lett. 40(3), 269 (1982).Google Scholar
9. Park, W.W., Becker, M.F., and Walser, R.M., J. Mater. Res. 3(2), 298 (1988).Google Scholar
10. Park, W.W., Becker, M.F., and Walser, R.M., Appl. Phys. Lett. 52(18), 1517 (1988).Google Scholar
11. Olson, G.L., Roth, J.A., Hess, L.D., and Narayan, J., Appl. Phys. Lett. 37, 1019 (1980).10.1063/1.91749Google Scholar
12. Olson, G.L., Roth, J.A., Hess, L.D., and Narayan, J., Mat. Res. Soc. Symp. Proc. 23, 375 (1984).Google Scholar
13. op cit. Ref.10.; Ni (T) = 1.2x1021 x exp(-0.27/kT) (cm-3) and Vi (T) = 4.6x1018 x exp(-2.75/kT) (Å/min) were obtained from boron concentration profiles of as-implanted samples obtained by SIMS measurements. This procedure yields slightly differeGoogle Scholar