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A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy

Published online by Cambridge University Press:  03 September 2012

S. C. Sharma ,
N. Hozhabri ,
R. G. Hyer ,
T. Hossain ,
S. Kim ,
F. O. Meyer III ,
M. F. Pas  and
A. E. Stephens
S. C. Sharma*
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
N. Hozhabri
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
R. G. Hyer
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
T. Hossain
Affiliation:
Texas Instruments, Dallas, Texas 75265
S. Kim
Affiliation:
Texas Instruments, Dallas, Texas 75265
F. O. Meyer III
Affiliation:
Texas Instruments, Dallas, Texas 75265
M. F. Pas
Affiliation:
Texas Instruments, Dallas, Texas 75265
A. E. Stephens
Affiliation:
Texas Instruments, Dallas, Texas 75265
*
* To whom correspondence should be addressed
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Abstract

We have studied defects in Cz-grown single crystal silicon by utilizing a variable energy positron beam and positron lifetime spectroscopy in conjunction with surface photovoltage measurements. We present results for the depth profile of defects obtained from the Doppler broadening spectra measured by implanting variable energy positrons at different depths ranging from the surface down to ∼ 1 /xm deep. We have also measured positron lifetime spectra at different locations on a wafer and have obtained a radial variation in the density of the vacancy-type defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 45
Copyright
Copyright © Materials Research Society 1992

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References

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