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Study of Deep Levels in LT-GaAs Materials and SI-GaAs Wafers by an Improved Thermoelectric Effect Spectroscopy

Published online by Cambridge University Press:  15 February 2011

Z. C. Huang  and
C. R. Wie
Z. C. Huang
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
C. R. Wie
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
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Abstract

We have developed a simpler and more reliable method of thermoelectric effect spectroscopy (TEES) by eliminating the second heater in the technique. We have applied this method to the deep level studies in semi-insulating(SI) GaAs epitaxial layers grown at a low temperature by molecular beam epitaxy (LT-GaAs) and SI-undoped GaAs, Cr-doped GaAs. We have found that the electrical contacts on front and back surfaces of the sample are more reliable for the TEES measurement than both contacts made on the same surface. In this contact arrangement, the temperature difference of about 1–2K between the back and front surfaces was enough to produce a clear and reliable TEES data, without the need for a second heater. The results obtained by TEES are consistent with the results obtained by photo-induced current transient spectroscopy (PICTS) and by thermally stimulated current (TSC) measurements. The TEES results clearly distinguish between the electron traps and the hole traps. We will discuss the results on the various semi-insulating GaAs samples and the advantages and limitations of the TEES technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 63
Copyright
Copyright © Materials Research Society 1992

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References

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