Skip to main content Accessibility help

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

  • M. P. Singh (a1), C. S. Thakur (a2), N. Bhat (a2) and S. A. Shivashankar (a1)


We report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.



Hide All
1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, (Web address
2. Maruyama, T. and Arai, S., Appl. Phys. Lett. 60, 322 (1992).
3. Kim, J.S, Marzouk, H.A., Reucroft, P.J., Robertson, J.D., and Harmin, C.E. Jr, Appl. Phys. Lett. 62, 681 (1993).
4. Kim, T.W., Yom, S.S., Kang, W.N., Yoon, Y.S., Kim, T., Kim, S., Yang, I.S., and Wee, I.G., Appl. Surf. Sci. 65–66, 854 (1993).
5. Ludeke, R., Cuberes, M.T., and Cartier, E., Appl. Phys. Lett. 76, 2886 (2000).
6. Singh, M.P., Raghavan, G., Tyagi, A.K., and Shivashankar, S.A., Bull. Mater. Sci., 25, 163 (2002).
7. Chowdhury, E.A., Kolodzey, J., Olowolafe, J.O., Qiu, G., Katulka, G., Hits, D., Dashiell, M., Weide, D.V.D., Swann, C.P., and Unruh, K.M., Appl. Phys. Lett. 70, 2732 (1997).
8. Nicollian, E.H and Brews, J.R., Metal Oxide Semiconductor (MOS) Physics and Technology (Wiely, New York, 1982).
9. Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (John Wiley and Sons Inc, New York, 1999).

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

  • M. P. Singh (a1), C. S. Thakur (a2), N. Bhat (a2) and S. A. Shivashankar (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed