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Study by Weak Beam and HRTEM of double stacking faults created by external mechanical stress in 4H-SiC

  • Hosni Idrissi (a1), Maryse Lancin (a1), Joel Douin (a2), Gabrielle Regula (a1), Bernard Pichaud (a1), Rachid El Bouayadi (a1) and Jean-Marc Rousse (a1)...

Abstract

4H-SiC samples are bent in compression mode at 550°C and 620°C. The introduced-defects are identified by Weak Beam and HRTEM techniques. They consist of double stacking faults bounded by 30° Si(g) partial dislocations whose glide locally transforms the material in its cubic phase. The velocity of partial dislocations is measured after chemical etching of the sample surface. The formation and the expansion of the double stacking faults are discussed.

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Study by Weak Beam and HRTEM of double stacking faults created by external mechanical stress in 4H-SiC

  • Hosni Idrissi (a1), Maryse Lancin (a1), Joel Douin (a2), Gabrielle Regula (a1), Bernard Pichaud (a1), Rachid El Bouayadi (a1) and Jean-Marc Rousse (a1)...

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