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Studies on the Surface Modification of Benzocyclobutene(BCB) Film By Plasma Ions

Published online by Cambridge University Press:  25 February 2011

Kyung W. Paik ,
Richard J. Saia  and
John J. Chera
Kyung W. Paik
Affiliation:
GE Corporate Research and Development, P.O.Box 8, Schenectady, NY 12301
Richard J. Saia
Affiliation:
GE Corporate Research and Development, P.O.Box 8, Schenectady, NY 12301
John J. Chera
Affiliation:
GE Corporate Research and Development, P.O.Box 8, Schenectady, NY 12301
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Abstract

The etch rates of BCB film in a reactive ion etcher(RIE) were measured using Ar, O2, O2+CF4, and O2+SF6 gas mixtures. Faster etch rates were obtained when CF4 and SF6 were added to oxygen, since the presence of atomic fluorine enhances the etch rate of organics, while also etching Si and SiO2 formed by exposure to oxygen gas. Surface compositional changes on the BCB film were observed by XPS after plasma modification. Pure O2 and O2+CF4 plasma oxidized the carbo-siloxane linkage (C-Si-O) of the BCB, resulting in the formation of SiO2 on the surface. The O2 +SF6 plasma, however, did not produce the surface SiO2, because of its faster Si and SiO2 etch rates. Ar ion sputtering following the plasma modification, restored the surface chemical composition to a state similar to the initial BCB surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 303
Copyright
Copyright © Materials Research Society 1991

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References

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