Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-17T23:00:47.417Z Has data issue: false hasContentIssue false
  • English
  • Français

Studies on the Interface of TiN/n-GaAs

Published online by Cambridge University Press:  25 February 2011

Ho Jie ,
Jin Gaolong ,
Lu Liwu ,
Xu Zhenjia  and
Zhang Lichun
Ho Jie
Affiliation:
National Lab for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China
Jin Gaolong
Affiliation:
National Lab for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China
Lu Liwu
Affiliation:
National Lab for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China
Xu Zhenjia
Affiliation:
National Lab for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China
Zhang Lichun
Affiliation:
National Lab for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China Institute of Microelectronics, Beijing University, Beijing 100080, P.R.China
Get access

Abstract

Recent reports on refractory metal nitrides/n-GaAs Schottky contacts have demonstrated that improved electrical performance can be obtained after annealing at temperature between 750 and 850°C . It is thought that a p+-type layer should be responsible for this phenomenon, which may be generated by N or N related defects. In this paper, the role of nitrogen in SI-GaAs and n-GaAs has been investigated by Hall effect and DLTS measurements. No evidence of the formation of a p+-type layer has been observed. A deep energy level of Ec-0.36eV which is thought to be related to N and an enhanced effect of N on the density of EL2 level were observed. DLTS and SIMS techniques were used to study the interface of TiN/n-GaAs Schottky contacts. The Ti3+(3d1)/Ti2+(3d2) single acceptor level at Ec-0.21 eV was observed, but the EL2 donor level is dominant. Combining the experimental results, a discussion is made about the reasons for the improvements of electrical performance after annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 325
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Waldrop, J.R., Appl. Phys. Lett. 43, 87 (1983)CrossRefGoogle Scholar
2 Uchitomi, N., Nagaoka, M., Shimada, K., Mizoguchi, T. and Toyoda, N., J.Vac.Sci.Technol. B4, 1392 (1986)CrossRefGoogle Scholar
3 Zhang, L.C., Cheung, S.K., Liang, C.L. and Cheung, N.W., Appl. Phys. Lett. 50, 445 (1987)Google Scholar
4 Zhu, Z., Cheung, N.W., Lemnios, Z.J., Strathman, M.D. and Stimmell, J.B., J.Vac.Sci.Technol. B4, 1398 (1986)Google Scholar
5 Fourkas, R.M. and Cheung, N.W., IEEE transactions on Electron Devices, 35, 1384 (1988)Google Scholar
6 Shannon, J.M., Solid-State Electronics, 19, 537 (1976)Google Scholar
7 Zhang, Lichun, Gao, Yuzhi, Ning, Baojun, Zhang, Lu, Yangyuan, Wng,Chin.J. Semicond.(China), 11(7), 551,and 11(8),615,(1990)Google Scholar
8 Properties of Gallium Arsenide, 2nd Ed., EMIS, Datareviews Seriers, No.2, an INSPEC publication, P192 (1990)Google Scholar
9 Hennel, A.M., Brandt, C.D., Wu, Y.-T., Bryskiewicz, T., Ko, K.Y., Lagowski, J. and Gatos, H.C., Phys. Rew. B33, 7353 (1986)Google Scholar
10 Brandt, C.D., Hennel, A.M., Bryskiewicz, T., Ko, K.Y., Pawlosicz, L.M. and Gatos, H.C., J. Appl. Phys., 65 (1989) 3459 Google Scholar
11 Zhang, Lichun, Gao, Yuzhi, Ning, Baojun, Zhang, Lu, Wng, Yangyuan,Chin. J. Semicond.(China), 11(12),966,(1990)Google Scholar
12 McCants, C.E., Kendelewicz, T., Mahowald, P.H., Bertness, K.A., Williams, M.D., Newman, N., Lindau, I. and Spicer, W.E., J.Vac.Sci.Technol. A6,1466 (1988)Google Scholar
13 Chen, H., Sadwick, L.P., Sokolich, M., Wang, K.L., Larson, R.D. and Chi, T.Y., J.Vac. Sci. Technol. B7, 1096 (1989)CrossRefGoogle Scholar
14 Paccagnella, A., Callegari, A., Carnera, A., Gasser, M. and Latta, E., Murakami, M. and Norcott, M., J.Appl.Phys.,69(4),2356,(1991)Google Scholar