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Studies on Epitaxial Relationship and Interface Structure of AlN/Si(111) and GaN/Si(111) Heterostructures

  • T. A. Rawdanowicz (a1), H. Wang (a1), A. Kvit (a1) and J. Narayan (a1)

Abstract

We present the details of epitaxial growth interface structure of single wurtzite AlN thin films on (111) Si substrates by laser-molecular-beam-epitaxy. High quality AlN thin films with atomically sharp interfaces can be obtained by Laser-MBE at a substrate temperature of 650 ±10°C. X-ray diffraction and high resolution transmission electron microscopy was used to study the details of epitaxial growth of AlN on Si(111) substrate. The orientation-relationship of AlN on Si(111) was studied from Si <110> and <112> zone axis and determined to be AlN [21 10]|Si[110] and AlN [0110]|Si[211]. The atomic structure of the interface was studied by high-resolution transmission electron microscopy and Fourier filtered image of cross-sectional AlN/Si(111) samples from both Si<110> and <112> zone axis. The results revealed the domain matching epitaxy of 4:5 ratio between the interplanar distances of Si(110) and AlN [21 10]. We also present similarities and differences between the growth mechanism of AlN/Si(111) and GaN/Si(111) heterostructures.

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Studies on Epitaxial Relationship and Interface Structure of AlN/Si(111) and GaN/Si(111) Heterostructures

  • T. A. Rawdanowicz (a1), H. Wang (a1), A. Kvit (a1) and J. Narayan (a1)

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