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Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si

Published online by Cambridge University Press:  21 February 2011

D. R. Lee ,
C. H. Bjorkman ,
C. Wang  and
G. Lucovsky
D. R. Lee
Affiliation:
Departments of Physics and Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202, U.S.A.
C. H. Bjorkman
Affiliation:
Departments of Physics and Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202, U.S.A.
C. Wang
Affiliation:
Departments of Physics and Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202, U.S.A.
G. Lucovsky
Affiliation:
Departments of Physics and Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202, U.S.A.
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Abstract

Current-voltage voltage characteristics of heterojunctions formed by remote plasma enhanced chemical vapor deposition (PECVD) of heavily doped μc-Si onto doped c-Si have been studied, as well as capacitance-voltage characteristics of MOS capacitor structures using heavily doped remote PECVD μc-Si and a-Si films as gate electrodes on thermally oxidized crystalline Si. Shifts in the flat-band voltages of MOS devices using the μc-Si and a-Si as gate electrodes relative to that of a reference Al/SiO2/c-Si structure are measured and explained in terms of a band structure model for the μc-Si and a-Si. Rectification and a photovoltaic effect observed in the pn heterojunctions are also explained in context of the same model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 395
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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