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Studies of Ion-Assisted Growth and Properties of PbTe Epilayers Deposited by Rf Magnetron Sputtering

Published online by Cambridge University Press:  25 February 2011

J.G. Cook ,
G. Mukherjee  and
S.R. Das
J.G. Cook
Affiliation:
Laboratory for Microstructural Sciences, The National Research Council of Canada, Ottawa, Canada K1A 0R6
G. Mukherjee
Affiliation:
Department of Physics, University of Ottawa, Ottawa, Canada KIN 6N5
S.R. Das
Affiliation:
Laboratory for Microstructural Sciences, The National Research Council of Canada, Ottawa, Canada K1A 0R6
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Abstract

(111) PbTe // (111) BaF2 epilayers have been prepared by rf magnetron sputtering. A small negative substrate bias voltage (-10 V) enhances the (111) growth habit at reduced substrate temperatures (180 °C) and increased deposition rates (2.5 μ/h–1). Langmuir probe diagnostics is used to determine the energy and flux density of Ar ions incident on the growing film. Hall effect measurements are made to determine the carrier type and mobility as a function of the growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 79
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Das, S.R., Phipps, M., Boland, W.E. and Cook, J.G., International Conference on Metallurgical Coatings, San Diego, 1989; Proceedings to be published in Thin Solid Films.Google Scholar
2 Kòhler, K., Home, D.E. and Coburn, J.W., J. Appl. Phys. 58, 3350 (1985).Google Scholar
3 Hershkowitz, N., Cho, M.H., Nam, C.H., and Intrator, T., Plasma Chem. and Plasma Proc. 8, 35 (1988).Google Scholar
4 Eser, E., Ogilvie, R.E. and Taylor, K.A., J. Vac. Sci. Technol. 15, 199 (1978).Google Scholar
5 Steinbruchel, Ch., J. Electrochem. Soc. 120, 648 (1983).Google Scholar
6 Metze, A., Ernie, D.W. and Oskaw, H.J., J. Appl. Phys. 60, 3081 (1986).Google Scholar
7 Egerton, R.F., Surface Science 24, 647 (1971).Google Scholar
8 Brice, D.K., Tsao, J.Y. and Picraux, S.T., Nucl. Instr. and Meth. B44, 68 (1989).Google Scholar
9 Zimmermann, P.H., Mathews, M.E. and Joslin, D.E., J. Appl. Phys. 50, 5815 (1979).Google Scholar
10 Dawar, A.L., Jain, S., Mohammad, A.O., Krishna, K.V. and Mathur, P.C., Solid Slate Electronics 22, 117 (1979).Google Scholar
11 Lopez-Otero, A., J. Appl. Phys. 48, 446 (1977).Google Scholar
12 Clemens, H., J. Crystal Growth 88, 236 (1988).Google Scholar