Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-26T22:04:21.975Z Has data issue: false hasContentIssue false
  • English
  • Français

Studies of Electrical Polarization Fatigue in SrBi2Ta2O9 Thin Films

Published online by Cambridge University Press:  10 February 2011

K. M. Lee ,
D. Thomas ,
S. H. Kim ,
J. P. Maria ,
A. I. Kingon  and
H. M. Jang
K. M. Lee
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
D. Thomas
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
S. H. Kim
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
J. P. Maria
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
H. M. Jang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
Get access

Abstract

The polarization suppression and electrical properties directly associated with the electrical polarization fatigue in SrBi2Ta2O9system were systematically investigated using Pt/SBT/Pt capacitors. Three general observations were made after 109 switching cycles: (i) ∼95% of the remanent polarization was conserved, (ii) both high and zero bias field capacitance decreased, and (iii) leakage current density increased from approximately 10−7 to 10−5 A/cm2at ∼30kV/cm2. In addition, the “knee” field, at which the leakage abruptly increases, assumed smaller values with cumulative switching cycles. Temperature dependent leakage data was collected for both as-deposited and field-cycled samples. Based on these results, we propose the possibilities of enhanced concentration of charge carriers or additional reductions in interfacial conduction barriers. Motion of oxygen vacancies to less-shallow energy levels near electrode/ferroelectric interface may allow this mechanism to occur.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 241
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Araujo, C. A. Paz de, Cuchiaro, J. D., McMillan, L. D., Scott, M. C., and Scott, J. F., Nature, Vol. 374, 627–29 (1995).Google Scholar
2. Boyle, T. J., Buchheit, C. D., Rodriguez, M. A., Al-Shareef, H. N., and Hernandez, B. A., J. Mater. Res., Vol. 11, 2274–81 (1996).Google Scholar
3. Scott, J. F., Ross, F. M., Araujo, C. A. Paz de, Scott, M. C., and Huffman, M., MRS Bulletin, 7, 33–39 (1996).Google Scholar
4. Han, J. P. and Ma, T. P., Appl. Phys. Lett., Vol. 72, 1185–86 (1998).Google Scholar
5. Al-Shareef, H. N., Dimos, D., Warren, W. L., and Tuttle, B. A., J. Appl. Phys, Vol. 80, 4573–77 (1996).Google Scholar
6. Chen, T. C., Thio, C. L., and Desu, S. B., J. Mater. Res., Vol. 12, 2628–37 (1997).Google Scholar
7. Al-Shareef, H. N., Dimos, D., Warren, W. L., and Tuttle, B. A., Integrated Ferroelectrics, Vol. 15, 53–67 (1997).Google Scholar
8. Al-Shareef, H. N., Dimos, D., Boyle, T. J., Warren, W. L., and Tuttle, B. A., Appl. Phys. Lett., Vol. 68, 690–92 (1996).Google Scholar
9. Al-Shareef, H. N., Dimos, D., Warren, W. L., and Tuttle, B. A., J. Appl. Phys., Vol.80, 4573–77 (1997).Google Scholar
10. Lee, K. M. et al. , in preparation (1998).Google Scholar
11. Zhang, Z. G., Liu, J. S., Wang, Y. N., Zhu, J. S., Yan, F., Chen, X. B., and Shen, H. M., Appl. Phys. Lett., Vol. 73, 788–90 (1998).Google Scholar
12. Kim, S. H. and Kingon, A. I. (unpublished).Google Scholar
13. Scott, J. F., Araujo, C. A., Melnick, B. M., Mcmillan, L. D., and Zuleeg, R., J. Appl. Phys., Vol. 70, 382–88 (1991).Google Scholar
14. Mihara, T., Watanabe, H., and Araujo, C.A. Paz de, Jpn. J. Appl. Phys., Vol.33, 5281–86 (1994).Google Scholar
15. Waser, R., Baiatu, T., and Hardtl, K. H., J. Am. Ceram. Soc., Vol. 73, 1645–53 (1990).Google Scholar
16. Simmons, J. G., J. Phys. D: Appl. Phys. 4, 613–657 (1971).Google Scholar