Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-25T05:03:29.541Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure - Property Relationships of Thin Films of Epitaxial Ferroelectric Bismuth-Layered Perovskites with Even and Odd Aurivillius' Parameters

Published online by Cambridge University Press:  10 February 2011

A. Pignolet ,
C. Harnagea ,
A. R. James ,
S. Senz ,
N. D. Zakharov  and
D. Hesse
A. Pignolet
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
C. Harnagea
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
A. R. James
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
S. Senz
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
N. D. Zakharov
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
D. Hesse
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
Get access

Abstract

Thin films of bismuth-layered perovskites with the generic formula (Bi2O2)2+(An- 1BnO3n+1)2- with an even Aurivillius' parameter n like SrBi2Ta2O9 (n = 2) and BaBi4Ti4O15 (n= 4) and with an odd Aurivillius' parameter like Bi4Ti3O12 (n= 3) and Ba2Bi4Ti5O18 (n=5) have been grown by pulsed laser deposition on epitaxial conducting LaNiO3 electrodes on single crystalline (100) SrTiO3 or on top of epitaxial buffer layers on (100) silicon. The films are shown to grow epitaxially, however, they do not have a single crystallographic orientation but several preferred orientations. The films consist of both c-axis-oriented regions and mixed (110)-, (100)- and (001)-oriented regions. The regions with mixed orientation feature rectangular as well as equiaxed crystalline grains embedded in a c-oriented matrix, protruding out of its smooth surface. Macroscopic as well as microscopic measurements of the ferroelectric properties of regions with pure c-orientation and of regions with mixed orientations showed a clear relationship between their ferroelectric properties and their morphology and crystallographic orientation. In the regions with mixed orientation, the films exhibited saturated ferroelectric hysteresis loops with well-defined remanent polarization Pr and coercive field Ec. The regions having c-axis orientation with a smooth surface morphology, in contrast, exhibited a linear P-E curve with no hysteretic behavior for SrBi2Ta2O9 and BaBi4Ti4O15, and weak ferroelectric behavior for Bi4Ti3O12. These results might have a technological impact due to the relevance of bismuth-layered ferroelectric oxides for the fabrication of non-volatile FeRAM memories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 415
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Scott, J. F., Ferroelectrics Review 1, 1 (1998).Google Scholar
2. Auciello, O., Scott, J. F., and Ramesh, R., Physics Today 51, 22 (1998).Google Scholar
3. Damjanovic, D., Rep.Prog.Phys. 61, 1267 (1998).Google Scholar
4. Ramesh, R., Inam, A., Chan, W. K., Wilkens, B., Myers, K., Remschnig, K., Hart, D. L., and Tarascon, J. M., Science 252, 944 (1991).Google Scholar
5. Araujo, C. A. Paz de, Cuchiaro, J. D., McMillan, L. D., Scott, M. C., and Scott, J. F., Nature 374, 627(1995).Google Scholar
6. Scott, J. F. and Araujo, C. A. Paz de, Science 246, 1400 (1989).Google Scholar
7. Symetrix Corp., Int. Patent H01L27/115, 21/320529/92 (1992).Google Scholar
8. Yoo, I. K. and Desu, S. B., J. Intell. Mater. Syst. Struct. 4, 490 (1993).Google Scholar
9. Gruverman, A., Auciello, O., and Tokumoto, H., Appl. Phys. Lett. 69, 3191 (1996).Google Scholar
10. Aurivillius, B., Arkiv Kemi, 2(37), 519 (1950) (in English);Google Scholar
Subba, E. C. Rao, J. Am.Ceram. Soc. 45, 166 (1962).Google Scholar
11. Aurivillius, B. and Fang, P. H., Phys. Rev. 126, 893 (1962);Google Scholar
Fang, P. H., Robbins, C. R., and Aurivillius, B., Phys. Rev. 126, 892 (1962).Google Scholar
12. Subbarao, E. C., J. Phys. Chem. Solids 23, 665 (1962).Google Scholar
13. Cummins, S. E. and Cross, L. E., Appl. Phys. Lett. 10, 14 (1967).Google Scholar
14. Newnham, R. E., Wolfe, R. W., and Dorrian, J. F., Mat. Res. Bull. 6, 1029 (1971).Google Scholar
15. Atsuki, T., Soyama, N., Yonezawa, T., and Ogi, K., Jpn. J. Appl. Phys. (Part 1) 34, 5096 (1995).Google Scholar
16. Tachiki, M., Yamamuro, K., and Kobayashi, T., Mater. Sci. Eng. B 41, 131 (1996).Google Scholar
17. Chen, T.-C., Li, T., Zhang, X., and Desu, S. B., J. Mater. Res. 12, 1569 (1997).Google Scholar
18. Watanabe, K., Hartmann, A. J., Lamb, R., and Scott, J. F., J. Appl. Phys. 84, 2170 (1998).Google Scholar
19. Takemura, K., Noguchi, T., Hase, T., and Miyasaka, Y., Appl. Phys. Lett. 73, 1649 (1998).Google Scholar
20. Seong, N.-J., Yang, C.-H., Shin, W.-C., and Yoon, S.-G., Appl. Phys. Lett. 72, 1374 (1998).Google Scholar
21. Lettieri, J., Jia, Y., Urbanik, M., Weber, C. I., Maria, J.-P., Schlom, D. G., Li, H., Ramesh, R., Uecker, R., and Reiche, P., Appl. Phys. Lett. 73, 2923 (1998).Google Scholar
22. Gruverman, A. and Ikeda, Y., Jpn. J. Appl. Phys. (Part 2) 37, L939 (1998).Google Scholar
23. Shimakawa, Y., Kubo, Y., Nakagawa, Y., Kamiyama, T., Asano, H., and Izumi, F., Appi. Phys. Lett. 74, 1904 (1999).Google Scholar
24. Satyalakshmi, K. M., Alexe, M., Pignolet, A., Zakharov, N. D., Harnagea, C., Senz, S., and Hesse, D., Appl. Phys. Lett. 74, 603(1999).Google Scholar
25. Park, B. H., Huyn, S. J., Bu, S. D., Noh, T. W., Lee, J., Kim, H.-D., Kim, T. H., and Jo, W., Appl. Phys. Lett. 74, 1907 (1999).Google Scholar
26. Pignolet, A., Alexe, M., Satyalakshmi, K. M., Senz, S., Hesse, D., and Gösele, U., accepted for publication in Ferroelectrics (Proc. ECAPD IV, August 24–27, 1998, Montreux, Switzerland).Google Scholar
27. Pignolet, A., Curran, C., Alexe, M., Zakharov, N. D., Hesse, D., and Gösele, U., Integr. Ferroelectr. 21, 485 (1998).Google Scholar
28. Pignolet, A., Satyalakshmi, K. M., Alexe, M., Zakharov, N. D., Harnagea, C., Senz, S., Hesse, D., and Gösele, U., Proc. 11th Symposium on Integrated Ferroelectrics (ISIF99), March 7–10, 1999, Colorado Springs, USA.Google Scholar
29. Willems, G. J., Wouters, D. J., Maes, H. E., and Nouwen, R., Integr. Ferroelectr. 15, 19 (1997).Google Scholar
30. Kim, S. K., Miyayama, M. and Yanagida, H., J. Ceram. Soc. Japan 102, 722 (1994).Google Scholar
31. Subbarao, E. C., Phys. Rev. 122, 804 (1961).Google Scholar
32. Tabata, H., Hamada, M. and Kawai, T., Mater. Res. Soc. Syrup. Proc. 401, 73 (1996).Google Scholar
33. Tabata, H., Yanagita, T., and Kawai, T., IEICE Trans. Electron. E81–C, 566 (1998).Google Scholar
34. Harnagea, C., Alexe, M., Pignolet, A., Satyalakshmi, K. M., Hesse, D., and Gösele, U., Proceedings of the NATO Advanced Research Worlshop “Piezoelectric Materials: Advances in Science, Technology and Applications”, May 24–27 1999 Predeal, Romania.Google Scholar
35. Harnagea, C., Pignolet, A., Alexe, M., Hesse, D., and Gösele, U., accepeted for publication in Applied Physics A.Google Scholar
36. Franke, K., Besold, J., Haessler, W., and Seegebarth, C., Surf. Sci. Lett. 301, L283 (1994).Google Scholar
37. Gruverman, A., Auciello, O., and Tokumoto, H., Integr. Ferroelectr. 19, 49 (1998).Google Scholar
38. Desu, S. B., Vijay, D. P., Zhang, X. and He, B. P., Appl. Phys. Lett. 69, 1719 (1996).Google Scholar
39. Auciello, O., Gruverman, A., Tokumoto, H., Prakash, S. A., Aggarwal, S., Ramesh, R., MRS Bulletin 23, 33 (1998).Google Scholar
40. Gruverman, A., Auciello, O., Tokumoto, H., Appl. Phys. Lett. 69, 3191 (1996).Google Scholar
41. Gruverman, A., Tokumoto, H., Prakash, S. A., Aggarwal, S., Yang, B., Wuttig, M., Auciello, O., Ramesh, R. and Vekantesan, T., Appl. Phys. Lett. 71, 3492 (1997).Google Scholar
42. Gruverman, A., and Ikeda, Y., Jpn. J. AppI. Phys. 37, L939 (1998).Google Scholar
43. Alexe, M., Harnagea, C., Erfurth, W., and Hesse, D., and Gösele, U., accepeted for publication in Applied Physics A. Google Scholar