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Structure - Property Relationships of Thin Films of Epitaxial Ferroelectric Bismuth-Layered Perovskites with Even and Odd Aurivillius' Parameters

  • A. Pignolet (a1), C. Harnagea (a1), A. R. James (a1), S. Senz (a1), N. D. Zakharov (a1) and D. Hesse (a1)...


Thin films of bismuth-layered perovskites with the generic formula (Bi2O2)2+(An- 1BnO3n+1)2- with an even Aurivillius' parameter n like SrBi2Ta2O9 (n = 2) and BaBi4Ti4O15 (n= 4) and with an odd Aurivillius' parameter like Bi4Ti3O12 (n= 3) and Ba2Bi4Ti5O18 (n=5) have been grown by pulsed laser deposition on epitaxial conducting LaNiO3 electrodes on single crystalline (100) SrTiO3 or on top of epitaxial buffer layers on (100) silicon. The films are shown to grow epitaxially, however, they do not have a single crystallographic orientation but several preferred orientations. The films consist of both c-axis-oriented regions and mixed (110)-, (100)- and (001)-oriented regions. The regions with mixed orientation feature rectangular as well as equiaxed crystalline grains embedded in a c-oriented matrix, protruding out of its smooth surface. Macroscopic as well as microscopic measurements of the ferroelectric properties of regions with pure c-orientation and of regions with mixed orientations showed a clear relationship between their ferroelectric properties and their morphology and crystallographic orientation. In the regions with mixed orientation, the films exhibited saturated ferroelectric hysteresis loops with well-defined remanent polarization Pr and coercive field Ec. The regions having c-axis orientation with a smooth surface morphology, in contrast, exhibited a linear P-E curve with no hysteretic behavior for SrBi2Ta2O9 and BaBi4Ti4O15, and weak ferroelectric behavior for Bi4Ti3O12. These results might have a technological impact due to the relevance of bismuth-layered ferroelectric oxides for the fabrication of non-volatile FeRAM memories.



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1. Scott, J. F., Ferroelectrics Review 1, 1 (1998).
2. Auciello, O., Scott, J. F., and Ramesh, R., Physics Today 51, 22 (1998).
3. Damjanovic, D., Rep.Prog.Phys. 61, 1267 (1998).
4. Ramesh, R., Inam, A., Chan, W. K., Wilkens, B., Myers, K., Remschnig, K., Hart, D. L., and Tarascon, J. M., Science 252, 944 (1991).
5. Araujo, C. A. Paz de, Cuchiaro, J. D., McMillan, L. D., Scott, M. C., and Scott, J. F., Nature 374, 627(1995).
6. Scott, J. F. and Araujo, C. A. Paz de, Science 246, 1400 (1989).
7. Symetrix Corp., Int. Patent H01L27/115, 21/320529/92 (1992).
8. Yoo, I. K. and Desu, S. B., J. Intell. Mater. Syst. Struct. 4, 490 (1993).
9. Gruverman, A., Auciello, O., and Tokumoto, H., Appl. Phys. Lett. 69, 3191 (1996).
10. Aurivillius, B., Arkiv Kemi, 2(37), 519 (1950) (in English);
Subba, E. C. Rao, J. Am.Ceram. Soc. 45, 166 (1962).
11. Aurivillius, B. and Fang, P. H., Phys. Rev. 126, 893 (1962);
Fang, P. H., Robbins, C. R., and Aurivillius, B., Phys. Rev. 126, 892 (1962).
12. Subbarao, E. C., J. Phys. Chem. Solids 23, 665 (1962).
13. Cummins, S. E. and Cross, L. E., Appl. Phys. Lett. 10, 14 (1967).
14. Newnham, R. E., Wolfe, R. W., and Dorrian, J. F., Mat. Res. Bull. 6, 1029 (1971).
15. Atsuki, T., Soyama, N., Yonezawa, T., and Ogi, K., Jpn. J. Appl. Phys. (Part 1) 34, 5096 (1995).
16. Tachiki, M., Yamamuro, K., and Kobayashi, T., Mater. Sci. Eng. B 41, 131 (1996).
17. Chen, T.-C., Li, T., Zhang, X., and Desu, S. B., J. Mater. Res. 12, 1569 (1997).
18. Watanabe, K., Hartmann, A. J., Lamb, R., and Scott, J. F., J. Appl. Phys. 84, 2170 (1998).
19. Takemura, K., Noguchi, T., Hase, T., and Miyasaka, Y., Appl. Phys. Lett. 73, 1649 (1998).
20. Seong, N.-J., Yang, C.-H., Shin, W.-C., and Yoon, S.-G., Appl. Phys. Lett. 72, 1374 (1998).
21. Lettieri, J., Jia, Y., Urbanik, M., Weber, C. I., Maria, J.-P., Schlom, D. G., Li, H., Ramesh, R., Uecker, R., and Reiche, P., Appl. Phys. Lett. 73, 2923 (1998).
22. Gruverman, A. and Ikeda, Y., Jpn. J. Appl. Phys. (Part 2) 37, L939 (1998).
23. Shimakawa, Y., Kubo, Y., Nakagawa, Y., Kamiyama, T., Asano, H., and Izumi, F., Appi. Phys. Lett. 74, 1904 (1999).
24. Satyalakshmi, K. M., Alexe, M., Pignolet, A., Zakharov, N. D., Harnagea, C., Senz, S., and Hesse, D., Appl. Phys. Lett. 74, 603(1999).
25. Park, B. H., Huyn, S. J., Bu, S. D., Noh, T. W., Lee, J., Kim, H.-D., Kim, T. H., and Jo, W., Appl. Phys. Lett. 74, 1907 (1999).
26. Pignolet, A., Alexe, M., Satyalakshmi, K. M., Senz, S., Hesse, D., and Gösele, U., accepted for publication in Ferroelectrics (Proc. ECAPD IV, August 24–27, 1998, Montreux, Switzerland).
27. Pignolet, A., Curran, C., Alexe, M., Zakharov, N. D., Hesse, D., and Gösele, U., Integr. Ferroelectr. 21, 485 (1998).
28. Pignolet, A., Satyalakshmi, K. M., Alexe, M., Zakharov, N. D., Harnagea, C., Senz, S., Hesse, D., and Gösele, U., Proc. 11th Symposium on Integrated Ferroelectrics (ISIF99), March 7–10, 1999, Colorado Springs, USA.
29. Willems, G. J., Wouters, D. J., Maes, H. E., and Nouwen, R., Integr. Ferroelectr. 15, 19 (1997).
30. Kim, S. K., Miyayama, M. and Yanagida, H., J. Ceram. Soc. Japan 102, 722 (1994).
31. Subbarao, E. C., Phys. Rev. 122, 804 (1961).
32. Tabata, H., Hamada, M. and Kawai, T., Mater. Res. Soc. Syrup. Proc. 401, 73 (1996).
33. Tabata, H., Yanagita, T., and Kawai, T., IEICE Trans. Electron. E81–C, 566 (1998).
34. Harnagea, C., Alexe, M., Pignolet, A., Satyalakshmi, K. M., Hesse, D., and Gösele, U., Proceedings of the NATO Advanced Research Worlshop “Piezoelectric Materials: Advances in Science, Technology and Applications”, May 24–27 1999 Predeal, Romania.
35. Harnagea, C., Pignolet, A., Alexe, M., Hesse, D., and Gösele, U., accepeted for publication in Applied Physics A.
36. Franke, K., Besold, J., Haessler, W., and Seegebarth, C., Surf. Sci. Lett. 301, L283 (1994).
37. Gruverman, A., Auciello, O., and Tokumoto, H., Integr. Ferroelectr. 19, 49 (1998).
38. Desu, S. B., Vijay, D. P., Zhang, X. and He, B. P., Appl. Phys. Lett. 69, 1719 (1996).
39. Auciello, O., Gruverman, A., Tokumoto, H., Prakash, S. A., Aggarwal, S., Ramesh, R., MRS Bulletin 23, 33 (1998).
40. Gruverman, A., Auciello, O., Tokumoto, H., Appl. Phys. Lett. 69, 3191 (1996).
41. Gruverman, A., Tokumoto, H., Prakash, S. A., Aggarwal, S., Yang, B., Wuttig, M., Auciello, O., Ramesh, R. and Vekantesan, T., Appl. Phys. Lett. 71, 3492 (1997).
42. Gruverman, A., and Ikeda, Y., Jpn. J. AppI. Phys. 37, L939 (1998).
43. Alexe, M., Harnagea, C., Erfurth, W., and Hesse, D., and Gösele, U., accepeted for publication in Applied Physics A.


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