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Structure of Thermally Grown SiO2 on Crystalline 6H‐SíC

Published online by Cambridge University Press:  10 February 2011

H. Tsuchida ,
I. Kamata  and
K. Izumi
H. Tsuchida
Affiliation:
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry, 2‐6‐1 Nagasaka, Yokosuka, Kanagawa 240‐01, Japan
I. Kamata
Affiliation:
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry, 2‐6‐1 Nagasaka, Yokosuka, Kanagawa 240‐01, Japan
K. Izumi
Affiliation:
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry, 2‐6‐1 Nagasaka, Yokosuka, Kanagawa 240‐01, Japan
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Abstract

The structure of a thermally grown SiO2 film on a crystalline 6H‐SiC substrate was investigated using X‐ray reflectivity and fourier‐transformed infrared attenuated total reflection (FTIR‐ATR). The density, surface roughness and interface roughness of thermal oxide on 6H‐SiC were obtained by X‐ray reflectivity. The TO mode and the LO mode of Si‐O‐Si stretching vibration from the thermal oxide film on 6H‐SiC were obtained from polarized ATR spectra. The local structure of SiO2 film near the SiO2 /SiC interface was discussed from the measurements, and the thermally grown SiO2 film on a 6H‐SiC substrate was found to have a structural transition layer with thickness below 10 nm near the SiO2/SiC interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 273
Copyright
Copyright © Materials Research Society 1997

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