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Structure of Au/Ge/Au Multilayer Ohmic contacts to GaAs

  • Tae-Il Kim (a1) and D. D. L. Chung (a1)

Abstract

The presence of a 500 Å Ge layer in Au/Ge/Au ohmic contacts to GaAs was found to hinder the agglomeration of Au upon heating. An ohmic contact as uniform as the asdeposited metallization was achieved after heating at 300°C. Heating at 350–500°C resulted in various morphological entities in a Au-rich matrix. The microstructure changed from one with a Au-rich matrix to one with a GaAs-rich matrix and dendritic Au-rich islands at 525±25°C. Heating at 400°C or above resulted in Au-Ga phases with the epitaxial relationships α' (110) ‖ GaAs (100) and Au2Ga (112) ‖ GaAs (100).

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1. Iliadis, A. and Singer, K.E., Solid-State Electron. 26, 714 (1983)
2. Zeng, X. F. and Chung, D. D. L., Thin Solid Films 93, 207218 (1982)
3. Christou, A., Solid-State Electron. 22, 141149 (1979)

Structure of Au/Ge/Au Multilayer Ohmic contacts to GaAs

  • Tae-Il Kim (a1) and D. D. L. Chung (a1)

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