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Structure And Mechanical Properties Of Reactive Sputter Deposited Tin/Tan Multilayered Films

Published online by Cambridge University Press:  10 February 2011

W.-H. Soe
Affiliation:
Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato-ku, Tokyo 106, Japan, soe@iis.u-tokyo.ac.jp
T. Kitagaki
Affiliation:
Shibaura Institute of Technology, 3–9–14 Shibaura, Minato-ku, Tokyo 106, Japan
H. Ueda
Affiliation:
Hitachi Tool Engineering,Ltd., 13–2 Shinizumi, Narita-shi, Chiba 286, Japan
N. Shima
Affiliation:
Hitachi Tool Engineering,Ltd., 13–2 Shinizumi, Narita-shi, Chiba 286, Japan
M. Otsuka
Affiliation:
Shibaura Institute of Technology, 3–9–14 Shibaura, Minato-ku, Tokyo 106, Japan
R. Yamamoto
Affiliation:
Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato-ku, Tokyo 106, Japan, soe@iis.u-tokyo.ac.jp
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Abstract

TiN/TaN multilayers were grown by reactive magnetron sputtering on WC-Co sintered hard alloy and MgO(100) single crystal substrates. Multilayer structure and composition modulation amplitudes were studied using x-ray diffraction method. Hardness and elastic modulus were mea- sured by nanoindentation tester. For bilayer thickness (Λ) larger than 80 A˚, hardness are lower than rule-of-mixtures value of individual single layers, and increased rapidly with decreasing Λ, peaking at hardness values ≈33% higher than that at A=43 Å. As a result of analysis the inclination of applied load for indenter displacement on P-h curve (ΔP/Δh), this paper exhibits that the en- hancement of the resistance to dislocation motion and elastic anomaly due to coherency strains are responsible for the hardness change.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Koehler, J. C., Phys. Rev. B 2, 547 (1970).Google Scholar
2.Cammarata, R. C., Schlesinger, T. E., Kim, C., Qadri, S. B., and Edelstein, A. S., Appl. Phys. Lett. 56, 1862 (1990).Google Scholar
3.Helmersson, U., Todorova, S., Barnett, S. A., Sundgren, J. E., Markert, L. C., and Greene, J. E., J. Appl. Phys. 62,481 (1987).Google Scholar
4.Mirkarimi, P. B., Hultman, L., and Barnett, S. A., Appl. Phys. Lett. 57, 2654 (1990).Google Scholar
5.Shinn, M., Hultman, L., and Barnett, S. A., J. Mater. Res. 7,901 (1992).Google Scholar
6.Chu, X., Wong, M. S., Sproul, W. D., Rohde, S. L., and Barnett, S. A., J. Vac. Sci. Technol. A 10, 1604(1992).Google Scholar
7.Baral, D., Ketterson, J. B., and Hilliard, J. E., in Modulated Structure Materials, Ed. Tsakalakos, T., Nijhoff Publ., Dordrecht, p.465 (1984).Google Scholar
8.Barnett, S. A., and Shinn, M., Annu. Rev. Mater. Sci. 24,481 (1994).Google Scholar
9.Shinn, M., and Barnett, S. A., Appl. Phys. Lett. 64, 61 (1994).Google Scholar
10.Krzanowski, J. E., Scr. Metall. 25, 1465 (1991).Google Scholar
11.Cahn, J. W., Acta Met. 11, 1274 (1963).Google Scholar