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Structure And Magnetic Properties Of Fe-N Thin Films Grown By Ecr Deposition

Published online by Cambridge University Press:  21 February 2011

S. Németh
Affiliation:
IMEC, NMC/NM, Kapeldreef 75, B-3001 Leuven, Belgium
H. Akinaga
Affiliation:
JRCAT : NAIR, 1-1-4 Higashi, Tsukuba, Ibaraki 305-8562, Japan
H. Boeve
Affiliation:
IMEC, NMC/NM, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC, NMC/NM, Kapeldreef 75, B-3001 Leuven, Belgium
J. De Boeck
Affiliation:
IMEC, NMC/NM, Kapeldreef 75, B-3001 Leuven, Belgium
G. Borghs
Affiliation:
IMEC, NMC/NM, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The growth of FexNy thin films on GaAs, In0.2Ga0.8As, and Si02/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, γ-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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