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Structure and Electronic Properties of Diamond-Like Carbon and its Heat-Treatment Effect

Published online by Cambridge University Press:  17 March 2011

Kazuyuki Takai ,
Meigo Oga ,
Hirohiko Sato ,
Toshiaki Enoki ,
Yoshimasa Ohki ,
Akira Taomoto ,
Kazutomo Suenaga  and
Sumio Iijima
Kazuyuki Takai
Affiliation:
Japan Science and Technology Corporation, c/o Department of Material Science and Engineering, Meijo University, Tenpaku-ku, Nagoya 468-8502, Japan.
Meigo Oga
Affiliation:
Department of Chemistry, Tokyo Institute of Technology, Ookayama, Meguro, Tokyo, 152-8551, Japan.
Hirohiko Sato
Affiliation:
Department of Chemistry, Tokyo Institute of Technology, Ookayama, Meguro, Tokyo, 152-8551, Japan.
Toshiaki Enoki
Affiliation:
Department of Chemistry, Tokyo Institute of Technology, Ookayama, Meguro, Tokyo, 152-8551, Japan.
Yoshimasa Ohki
Affiliation:
Matsushita Electric Industrial Co., Ltd., Higashimita, Tama-ku, Kawasaki, 214-8501, Japan.
Akira Taomoto
Affiliation:
Matsushita Electric Industrial Co., Ltd., Higashimita, Tama-ku, Kawasaki, 214-8501, Japan.
Kazutomo Suenaga
Affiliation:
Japan Science and Technology Corporation, c/o Department of Material Science and Engineering, Meijo University, Tenpaku-ku, Nagoya 468-8502, Japan.
Sumio Iijima
Affiliation:
Japan Science and Technology Corporation, c/o Department of Material Science and Engineering, Meijo University, Tenpaku-ku, Nagoya 468-8502, Japan.
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Abstract

Diamond-Like Carbon (DLC) was gradually converted to the disordered graphite by means of heat-treatment (HT). According to Raman spectroscopy and x-ray diffraction (XRD), the disorder nature of the structure is modified from atomic scale sp2/sp3 disorder to disordered sp2-domain network by the migration of sp3-defects induced by HT at temperatures 200 - 400°C. The structural change increases conductivity and modifies the hopping conduction mechanism at low temperatures. The slight positive thermoelectric power for samples with graphitic domains is suggestive of carrier compensation by the competition of hole and electron carriers that originates from the inhomogeneous charge distribution caused by the difference of Fermi levels among the sp2-domains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R1.7
Copyright
Copyright © Materials Research Society 2002

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References

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