Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T05:30:30.501Z Has data issue: false hasContentIssue false

Structure and Characterization of Sputtered Thin Films Based on Lead Titanate.

Published online by Cambridge University Press:  15 February 2011

A. Pignolet
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
P. E. Schmid
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
L. Wang
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
F. Lévy
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
Get access

Abstract

Pure and doped lead-titanate (PT) and lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is tetragonal or rhombohedral depending on composition. The electrical resistivity, dielectric permittivity, ferroelectric hysteresis and pyroelectric coefficient are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Okamoto, K., Nasu, Y. and Hamakawa, Y., IEEE Transactions on electron devices ED–28, 698 (1981).Google Scholar
[2] Putley, E. H., \Vatton, R. and Ludlow, J. H., Ferroelectric 3, 263 (1972).Google Scholar
[3] Beerman, H. P., Ferroelectrics 2, 123 (1971).Google Scholar
[4] Takayama, R., Tomita, Y., Iijima, K. and Ueda, I., J. Appl. Phys. 61, 411 (1987).Google Scholar
[5] Takavama, R., Tomita, Y., Iijima, K. and Ueda, I., J. Appl. Phys. 63, 5868 (1988).Google Scholar
[6] Iijima, K., Kawashima, S. and Ueda, I., Jpn. J. Appl. Phys 24 2, 482 (1985).Google Scholar
[7] Okuyama, M. and Hamakawa, Y., Sensors and Materials 1, 13 (1988).Google Scholar
[8] Scott, J. F. and Paz de Araujo, C. A., Science 246, 1400 (1989).Google Scholar
[9] Atkin, R. B., Ferroelectrics 3, 213 (1972).Google Scholar
[10] Chapman, D. V., J. Vac. Sci. Technol. 9, 425 (1971).Google Scholar
[11] Anderson, L. K., Ferroelectrics 3, 69 (1972).Google Scholar
[12] Wu, S. Y., Takei, W. J. and Francombe, M. H., Ferroelectrics 10, 209 (1976).Google Scholar
[13] Sreenivas, K., Saver, M. and Garrett, P., Thin Solid Films 172, 251 (1989).Google Scholar
[14] Potdar, H. S., Sathaye, S. D., Mandale, A. B. and Date, S. K., Materials Letters 9, 71 (1990).Google Scholar
[15] Dengquan, X., Zhili, X., Jumu, Z., Derui, W., Huachong, G., Bizheng, X., and Hong, Y., Appl. Phys. Lett. 58, 36 (1991).Google Scholar
[16] Ferroelectric Thin Films, edited by Myers, E.R. and Kingon, A.I. (Mater. Res. Soc. Proc. 200 San Fransisco, 1990).Google Scholar
[17] Adachi, H., Mitsuyu, T., Yamazaki, O. and Wasa, K., J. Appl. Phys. 60(2), 736 (1986).Google Scholar
[18] Adachi, M., Matsuzaki, T., Yamada, T., Shiosaki, T. and Kawabata, A., Jpn. J. Appl. Phys. 26, 550 (1987).Google Scholar
[19] Iijima, K., Takayama, R., Tomita, Y. and Ueda, I., J. Appl. Phys. 60(8), 2914 (1986).Google Scholar
[20] Okuyama, M., Ueda, T. and Hamakawa, Y., Jpn. J. Appl. Phys. 24 2, 619 (1985).Google Scholar
[21] Okuyama, M., Ueda, T. and Hamakawa, Y., Jpn. J. Appl. Phys. 24 3, 3 (1985).Google Scholar
[22] Pignolet, A., Schmid, P. E., Wang, L. and Lévy, F., to be published in J. Phys. D: Appl. Phys., (1991).Google Scholar
[23] Wang, L., Pignolet, A. and Lévy, F., Mat. Res. Bull. 25, 1495 (1990).Google Scholar
[24] Iijima, K., Tomita, Y., Takayama, R. and Ueda, I., J. Appl. Phys. 60, 361 (1986).Google Scholar
[25] Takyama, R., Tomita, A. and Abe, A., Ferroelectrics 95, 195 (1989).Google Scholar
[26] Liu, S. T., Heaps, J. D. and 0. Tufte, N., Ferroelectrics 3, 281 (1972).Google Scholar
[27] Deb, K. K., Ferroclectrics 88, 167 (1988).Google Scholar
[28] Hellwege, K. -H., Landoldt-Börnstein, New Series, Group III vol.16a (Springer-Verlag, Berlin, 1981), p 431.Google Scholar