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Structural Studies of Nickel Films and their Interface with Sapphire Substrates

Published online by Cambridge University Press:  26 February 2011

C. J. Sparks ,
M. Hasaka ,
D. S. Easton ,
S. Baik ,
T. Habenschuss  and
G. E. Ice
C. J. Sparks
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
M. Hasaka
Affiliation:
Nagasaki University, Dept. of Materials Science and Engineering, Nagasaki, Japan
D. S. Easton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
S. Baik
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
T. Habenschuss
Affiliation:
Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831
G. E. Ice
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

The perfection of epitaxial nickel films grown on the (00.ℓ) or basal plane of heated sapphire (A1203) single crystals were studied with X-ray diffraction techniques. Nickel films approximately 700 Å thick formed by vapor deposition increased in perfection as the temperature of the sapphire approached 1400°C. Although the nickel atom distances are 10.3% smaller than those of the closed-packed direction in sapphire, the strain was accommodated at the interface rather than being distributed through the thickness of the nickel film. Diffuse rods of X-ray scattering which are associated with diffraction from the interface gave information about the nature of the roughness at the interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 495
Copyright
Copyright © Materials Research Society 1987

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References

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