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Structural Studies of Metal-Semiconductor Interfaces by Means of Surface Extended X-Ray Absorption Edge Fine Structure

Published online by Cambridge University Press:  15 February 2011

J. Stohr ,
R. Jaeger ,
T. Kendelewicz ,
G. Rossi  and
I. Lindau
J. Stohr
Affiliation:
Corporate Research Science Laboratories, Exxon Research and Engineering Company, Linden, NJ 07036, (U.S.A.)
R. Jaeger
Affiliation:
Corporate Research Science Laboratories, Exxon Research and Engineering Company, Linden, NJ 07036, (U.S.A.)
T. Kendelewicz
Affiliation:
Stanford Electronics Laboratories and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA 94305, (U.S.A.)
G. Rossi
Affiliation:
Stanford Electronics Laboratories and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA 94305, (U.S.A.)
I. Lindau
Affiliation:
Stanford Electronics Laboratories and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA 94305, (U.S.A.)
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Abstract

We report surface extended X-ray absorption edge fine structure (SEXAFS) studies of the early stages of Schottky barrier formation. Results will be presented for aluminum, silver and palladium on Si(111) 7 × 7 in the range from ⅓ monolayer to five monolayers. The SEXAFS signal reveals the local structure around the metal atoms in terms of bond lengths and coordination numbers. Complex ordered and disordered surface structures are observed ranging from weak reaction between the components (e.g. silver clusters on silicon) to strong reaction (e.g. Pd2Si formation). At elevated temperatures the Ag–Si interface is particularly interesting and consists of a well-defined ordered interface layer (√3 × √3 Ag on Si(111)) with silver clusters growing on top. While most other surface structural techniques fail to yield complete information the power of SEXAFS as a local structural technique becomes most apparent for such complex systems. Structure determinations for some metalsemiconductor interfaces will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 15
Copyright
Copyright © Materials Research Society 1982

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