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Structural Studies of an InAs-GaAs Superlattice Alloy

  • M. C. Tamargo (a1), R. Hull (a2), L. H. Greene (a1), J. R. Hayes (a1), N. Tabatabaie (a1) and A. Y. Cho (a2)...

Abstract

Thin alternating layers of InAs and GaAs have been grown by MBE on buffer layers lattice matched to InP. The layer structure was evaluated by transmission electron microscopy (TEM) and low angle X-ray scattering. Commensurate epitaxial layers approximately 15Å thick were obtained in spite of the large lattice mismatch (7%). These results and their implication for growth conditions of strained-layer superlattices will be discussed.

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[1] Hayes, J. R., Adams, A. R., Greene, P. D. “GaInAsP Alloy Semiconductors” edited by Pearsall, T. P. (John Wiley, 1982) p. 189.
[2] Yao, T., Jpn. J. Appl. Phys. 22 (1983) 680.
[3] Matthews, J. M., Blakeslee, A. E., J. Cryst, Growth 27 (1974) 118.
[4] Tamargo, M. C., Hull, R., Greene, L. H., Hayes, J. R., Cho, A. Y., Appl. Phys. Let. 46 (1985) 569.
[5] Grunthaner, F. J., “International Conference on Superlattices, Microstructures and Microdevice,” Champaign, Ill. August 1984.

Structural Studies of an InAs-GaAs Superlattice Alloy

  • M. C. Tamargo (a1), R. Hull (a2), L. H. Greene (a1), J. R. Hayes (a1), N. Tabatabaie (a1) and A. Y. Cho (a2)...

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