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Structural Investigation of SiC/Al4C3 and SiC/TiC Interfaces Formed in the Brazing of Sic

  • T. Yano (a1), S. Kato (a1), H. Suematsu (a1) and T. Iseki (a2)

Abstract

Two heterophase interfaces formed in the joining of α-SiC were investigated using high-resolution electron microscopy coupled with a multi-slice structural image simulation. A reaction product TiC was formed epitaxially on the basal plane of α-SiC single crystal when SiC was brazed with a Ag-Cu alloy containing small amount of Ti. A coherent interface with Si-C and Ti-C bonding was found between the SIC(0001) and TiC(111). Al4C3 was grown also epitaxially on the basal plane of SiC when it was brazed with AL. A semicoherent interface including interfacial dislocations and intermediate' transition phase was observed between the SIC(0001) and Al4C3(0001). It was estimated that the carbon atom sublattice was maintained through those crystals.

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Structural Investigation of SiC/Al4C3 and SiC/TiC Interfaces Formed in the Brazing of Sic

  • T. Yano (a1), S. Kato (a1), H. Suematsu (a1) and T. Iseki (a2)

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