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Structural Characterization of SiF4, SiH4 and H2 Hot-Wire-Grown Microcrystalline Silicon Thin Films with Large Grains

Published online by Cambridge University Press:  17 March 2011

J. J. Gutierrez ,
C. E. Inglefield ,
C. P. An ,
M. C. DeLong ,
P. C. Taylor ,
S. Morrison  and
A. Madan
J. J. Gutierrez
Affiliation:
Department of Physics, Weber State University Ogden, UT 84408, U.S.A
C. E. Inglefield
Affiliation:
Department of Physics, Weber State University Ogden, UT 84408, U.S.A
C. P. An
Affiliation:
Department of Physics, University of Utah Salt Lake City, UT 84112, U.S.A
M. C. DeLong
Affiliation:
Department of Physics, University of Utah Salt Lake City, UT 84112, U.S.A
P. C. Taylor
Affiliation:
Department of Physics, University of Utah Salt Lake City, UT 84112, U.S.A
S. Morrison
Affiliation:
MVSystems Golden, CO 80401, U.S.A
A. Madan
Affiliation:
MVSystems Golden, CO 80401, U.S.A
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Abstract

In this paper, we present a comprehensive study of microcrystalline silicon thin film samples deposited by a novel growth process intended to maximize their grain size and crystal volume fraction. Using Atomic Force Microscopy, Raman spectroscopy, and x ray diffraction the structural properties of these samples were characterized qualitatively and quantitatively. Samples were grown using a Hot-Wire Chemical Vapor Deposition process with or without a post-growth hot-wire annealing treatment. During Hot-Wire Chemical Vapor Deposition, SiF4 is used along with SiH4 and H2 to grow the thin films. After growth, some samples received an annealing treatment with only SiF4 and H2 present. These samples were compared to each other in order to determine the deposition conditions that maximize grain size. Large microcrystalline grains were found to be aggregates of much smaller crystallites whose size is nearly independent of deposition type and post-annealing treatment. Thin films deposited using the deposition process with SiF4 partial flow rate of 2 sccm and post-growth annealing treatment had the largest aggregate grains ∼.5 µm and relatively high crystal volume fraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A3.4
Copyright
Copyright © Materials Research Society 2001

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References

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