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Structural Characterization Of Sic Epitaxial Layers Grown On Porous Sic Substrates

Published online by Cambridge University Press:  21 March 2011

S. E. Saddow ,
G. Melnychuk ,
M. Mynbaeva ,
I. Nikitina ,
W. M. Vetter ,
L. Jin ,
M. Dudley ,
M. Shamsuzzoha ,
V. Dmitriev  and
C. E. C. Wood
S. E. Saddow
Affiliation:
Emerging Materials Research Laboratory, Dept. of ECE, Mississippi State, MS 39762-9571
G. Melnychuk
Affiliation:
Emerging Materials Research Laboratory, Dept. of ECE, Mississippi State, MS 39762-9571
M. Mynbaeva
Affiliation:
Ioffe Institute, St. Petersburg, 194021 Russia
I. Nikitina
Affiliation:
Ioffe Institute, St. Petersburg, 194021 Russia
W. M. Vetter
Affiliation:
Dept. of Materials Science, SUNY-Stony Brook, Stony Brook, NY
L. Jin
Affiliation:
Dept. of Materials Science, SUNY-Stony Brook, Stony Brook, NY
M. Dudley
Affiliation:
Dept. of Materials Science, SUNY-Stony Brook, Stony Brook, NY
M. Shamsuzzoha
Affiliation:
Dept. of Metallurgical Engr. & School of Mines Energy Dev., University of Alabama, Tuscaloosa, AL 35487
V. Dmitriev
Affiliation:
TDI, Inc, Gaithersburg, MD, 20877
C. E. C. Wood
Affiliation:
Office of Naval Research, 800 N. Quincy St., Arlington, VA 22217USA
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Abstract

A layer of porous SiC was fabricated by surface anodization of commercial 4H and 6H-SiC (0001)Si face off-axis wafers. A 8.5 μm 4H–SiC epilayer was grown on porous SiC (PSC) substrates using atmospheric pressure CVD. TEM investigation on cross-sectional specimens of the CVD epitaxial layers revealed that the presence of pores in the substrate does not lead to the formation of any micropipe in the epitaxial layer. The investigation also failed to detect a more than usual dislocation density on the basal plane of the epitaxial layer. Based upon the results of various analytical techniques applied to the CVD deposit we propose that the density of screw dislocations in the epitaxial layer is less than 5–104 cm−3. It should be noted that the density of similar types of dislocations in the initial substrate as determined by the TEM was ∼106 cm−3, so this preliminary investigation indicates that the epitaxial layer grown on PSC may have a reduction in dislocation density of more than an order of magnitude over those grown on conventional SiC substrates that are not porous. Synchrotron white beam x-ray topography (SWBXT) was performed on these layers. Comparison between the dislocation density on the porous and standard epitaxial layers proved to be very similar using this technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H2.7
Copyright
Copyright © Materials Research Society 2001

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References

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