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Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers

Published online by Cambridge University Press:  15 February 2011

H. Bender ,
M. F. Wu ,
A. Vantomme ,
H. Pattyn  and
G. Langouche
H. Bender
Affiliation:
IIMEC, Kapeldreef 75, B-3001 Leuven, Belgium, bender@imec.be
M. F. Wu
Affiliation:
Instituut Kern- en Stralingsfyica, University of Leuven, B-3001 Leuven, Belgium Department Technical Physics, Peking University, Beijing, China
A. Vantomme
Affiliation:
Instituut Kern- en Stralingsfyica, University of Leuven, B-3001 Leuven, Belgium
H. Pattyn
Affiliation:
Instituut Kern- en Stralingsfyica, University of Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut Kern- en Stralingsfyica, University of Leuven, B-3001 Leuven, Belgium
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Abstract

The results are discussed of the characterization by means of TEM, RBS and XRD of ErSi2-x layers prepared by ion beam synthesis on (111) silicon. It will be shown that high quality (buried) layers can be prepared by channelled implantation of the erbium, whereas unchannelled implantation leads to discontinuous polycrystalline surface layers. The epitaxial growth and vacancy ordering in the silicide are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 499
Copyright
Copyright © Materials Research Society 1996

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