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Structural Characterization of Dynamic Annealing Effects of P+ Implanted SI

  • Marina Berti (a1), A.V. Drigo (a1), E. Gabilli (a2), R. Lotti (a2), G. Lulli (a2), P.G. Merli (a2) and M. Vittori Antisari (a3)...

Abstract

Some renarks about the mechanism for dynamic annealing during high dose rate P implantation of Si are reported. TEM observations and RBS channeling measurements show that the ion bombardment enhances the amorphous to crystalline transformation in the temperature range 200 ≤ T ≤ 600°C. It is found that the ratio between the observed recrystalli-zation velocity and the thermal SPE velocity decreases with increasing temperature. This indicates that a transition temperature must exist between the ion-assisted recrystallization regime and the ?lermal SPE regime. For the energy (100 keV) and the dose rate (60,uA/cm2) used in our experiments the transition temperature is about 700°C.

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Structural Characterization of Dynamic Annealing Effects of P+ Implanted SI

  • Marina Berti (a1), A.V. Drigo (a1), E. Gabilli (a2), R. Lotti (a2), G. Lulli (a2), P.G. Merli (a2) and M. Vittori Antisari (a3)...

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