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Structural Characterization of Composition-Modulated ZnSel-xTex Epitaxial Films

  • S. P. Ahrenkiel, M. H. Bode, M. M. Al-Jassim (a1), H. Luo (a2), S. H. Xin and J. K. Furdyna (a3)...

Abstract

We examine the microstructure of short-period (14–31 Å) composition modulations in epitaxial ZnSel-xTex (x@0.5) films grown by molecular-beam epitaxy (MBE) on vicinal (001) GaAs. Transmission electron microscope (TEM) images of cross-sections reveal highly-periodic contrast along the growth direction throughout the full thicknesses of the films (over 2 μm) that corresponds to a nearly sinusoidal variation between Se- and Te-rich compositions. Growth of ZnSe1-xTe x at 285°C on substrates tilted 4° toward [1111 maximizes the strength and regularity of the modulation. Using dynamical electron-diffraction simulations, we estimate a modulation amplitude of r@0.184(7) in a sample showing strong modulation. We assume a small amplitude of strain modulation to fit the experimental data.

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Structural Characterization of Composition-Modulated ZnSel-xTex Epitaxial Films

  • S. P. Ahrenkiel, M. H. Bode, M. M. Al-Jassim (a1), H. Luo (a2), S. H. Xin and J. K. Furdyna (a3)...

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