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Structural Characterization of Composition-Modulated ZnSel-xTex Epitaxial Films

Published online by Cambridge University Press:  10 February 2011

S. P. Ahrenkiel ,
M. H. Bode ,
M. M. Al-Jassim ,
H. Luo ,
S. H. Xin  and
J. K. Furdyna
M. M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
H. Luo
Affiliation:
State University of New York at Buffalo, NY 14260
J. K. Furdyna
Affiliation:
University of Notre Dame, Notre Dame, IN 46556
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Abstract

We examine the microstructure of short-period (14–31 Å) composition modulations in epitaxial ZnSel-xTex (x@0.5) films grown by molecular-beam epitaxy (MBE) on vicinal (001) GaAs. Transmission electron microscope (TEM) images of cross-sections reveal highly-periodic contrast along the growth direction throughout the full thicknesses of the films (over 2 μm) that corresponds to a nearly sinusoidal variation between Se- and Te-rich compositions. Growth of ZnSe1-xTex at 285°C on substrates tilted 4° toward [1111 maximizes the strength and regularity of the modulation. Using dynamical electron-diffraction simulations, we estimate a modulation amplitude of r@0.184(7) in a sample showing strong modulation. We assume a small amplitude of strain modulation to fit the experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 295
Copyright
Copyright © Materials Research Society 1996

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