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Structural Characterization and Raman Studies of SrBi2Ta0.8Nb1.2O9 Thin Films

Published online by Cambridge University Press:  10 February 2011

S. Srinivas ,
R. R. Das ,
J. Mercoda ,
E. R. Fachini ,
W. Perez  and
R. S. Katiyar
S. Srinivas
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931USA
R. R. Das
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931USA
J. Mercoda
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931USA
E. R. Fachini
Affiliation:
Department of Chemistry, University of Puerto Rico, San Juan, PR 00931USA
W. Perez
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931USA
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931USA
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Abstract

The effect of growth conditions such as substrate temperature and oxygen partial pressure on the microstructure and properties of pulsed laser deposited SBTN thin films on Si(100) and MgO(100) substrates have been studied. Crystallization of films begins at room temperature but, the obtained phase was non-ferroelectric. The influence of oxygen pressure (150 to 450 mTorr) on crystallinity of the films deposited on Si(100) at 750°C is negligible. XPS studies of as-deposited films reveal that the oxygen vacancies are preferably present near the Bi ions at the Bi2O2 layers and vary with substrate temperature and oxygen partial pressure. Also, XPS studies of Sr 3d core level for SBTN films suggest that the oxygen ions in the Sr(Ta/Nb)2O7 perovskite layers are much more stable than those in the Bi2O2 layers. Micro-Raman studies of SBTN films deposited below 700°C show Raman modes of a non -ferroelectric phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 191
Copyright
Copyright © Materials Research Society 2000

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