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Structural Characteristics of MOCVD Grown AlN Films with Different Carbon Concentration

Published online by Cambridge University Press:  10 February 2011

Yun-Xin Li ,
Lourdes Salamanca-Riba ,
M. G. Spencer ,
K. Wongchigul ,
P. Zhou ,
X. Tang ,
V. Talyansky  and
T. Venkatesan
Yun-Xin Li
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742
Lourdes Salamanca-Riba
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
K. Wongchigul
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
P. Zhou
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
X. Tang
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
V. Talyansky
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
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Abstract

The structural characteristics of MOCVD AlN films with different carbon doping concentrations grown on sapphire were investigated by XRD (θ–2θ scans, ϕ scans and rocking curves ), HRTEM and Auger spectroscopy. The AlN:C films have very high crystalline quality and low resistivity. The epitaxial relationship between AlN and Sapphire is: (0001)AlN //(0001)Sap, [ 12 10]AlN//[0 110] Sap and [10 10]AlN //[ 2110]Sap. With increasing carbon concentration, the AlN films have higher carrier concentrations, and lower resistivities even though they have higher defect density. The resistivity decreases by 8 orders of magnitude with C doping. When the carbon concentration reaches 11%, an interfacial layer of ∼5nm was observed in HRTEM images. This layer suggests that some C in the film is diffusing into the sapphire substrate. However, optical diffractograms obtained from the negatives of the HRTEM showed no appreciable change in the structure of the interfacial layer compared to the pure substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 555
Copyright
Copyright © Materials Research Society 1997

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References

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