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Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity

Published online by Cambridge University Press:  15 February 2011

A.H. Mahan ,
J. Yang ,
S. Guha  and
D.L. Williamson
A.H. Mahan
Affiliation:
National Renewable Energy Laboratory, Golden CO 80401
J. Yang
Affiliation:
United Solar Systems Corp., Troy, MI 48084
S. Guha
Affiliation:
United Solar Systems Corp., Troy, MI 48084
D.L. Williamson
Affiliation:
Colorado School of Mines, Golden, CO 80401
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Abstract

Using infrared, H evolution and x-ray diffraction (XRD), the structure of high H dilution, glow discharge deposited a-Si:H films ‘on the edge of crystallinity’ is examined. From the Si-H wag mode peak frequency and the XRD results, we postulate the existence of very small Si crystallites contained within the as-grown amorphous matrix, with the vast majority of the bonded H located on these crystallite surfaces. Upon annealing at ramp rates of 8-15°C/min, a H evolution peak at ~400°C appears, and film crystallization is observed at temperatures as low as 500°C, both of which are far below those observed for a-Si:H films grown without H dilution using similar rates. While the crystallite volume fraction is too small to be detected by XRD in the as-grown films, these crystallites enable the crystallization of the remainder of the amorphous matrix upon moderate annealing, thus explaining the existence of the low temperature H evolution peak.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 269
Copyright
Copyright © Materials Research Society 1999

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