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The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

  • Tim Michael Smeeton (a1), Mathieu Sénès (a1), Katherine L Smith (a2), Stewart E Hooper (a3) and Jon Heffernan (a4)...

Abstract

The structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

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1. Arakawa, Y., phys. stat. sol. (a) 188 37 (2001)
2. Bimberg, D. et al., J. Phys.: Condens. Matter 15 R1063 (2003)
3. Chichibu, S.F. et al., Nature Materials 5 810 (2006)
4. Schömig, H. et al., Phys. Rev. Lett. 92 106802 (2004)
5. Smeeton, T.M. et al., Appl. Phys. Lett. 83, 5419 (2003)
6. Damilano, B. et al., Appl. Phys. Lett. 75 3751 (1999)
7. Adelmann, C. et al., Appl. Phys. Lett. 76 1570 (2000)
8. Yamaguchi, T. et al., Mater. Res. Soc. Symp. Proc. 831 69 (E2.2) (2005)
9. Tachibana, K. et al., Appl. Phys. Lett. 74, 383 (1999)
10. Moriwaki, O. et al., Appl. Phys. Lett. 76 2361 (2000)
11. Pretorius, A. et al., phys. stat. sol. (c) 3 1679 (2006)
12. Lumilog “Standard” templates
13. Lakner, H. et al., J. Electron. Materials 26, 1103 (1997)
14. Takeguchi, M. et al., Appl. Phys. Lett. 84 2103 (2004)
15. Vickers, M.E. et al., J. Appl. Phys. 94 1565 (2003)
16. Sénès, M., Smith, K.L., Smeeton, T.M., Hooper, S.E. and Heffernan, J., Phys. Rev. B (in press)
17. Chamard, V. et al., Phys. Rev. B 69 125327 (2004)
18. Robinson, J.W. et al., Appl. Phys. Lett. 83, 2674 (2003)

Keywords

The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

  • Tim Michael Smeeton (a1), Mathieu Sénès (a1), Katherine L Smith (a2), Stewart E Hooper (a3) and Jon Heffernan (a4)...

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