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Structural and Optical Properties of Porous III-V Semiconductors GaAs, InP Prepared by Electrochemical Etching

Published online by Cambridge University Press:  07 March 2013

Nicholas L. Dmitruk ,
Natalia I. Berezovska ,
Igor M. Dmitruk ,
Denis O. Naumenko ,
Irene Simkiene  and
Valentinas Snitka
Nicholas L. Dmitruk
Affiliation:
Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45 Nauki Prospect, Kyiv, 03650, Ukraine
Natalia I. Berezovska
Affiliation:
Taras Shevchenko National University of Kyiv, 64 Volodymyrs’ka, Kyiv, 01601, Ukraine
Igor M. Dmitruk
Affiliation:
Taras Shevchenko National University of Kyiv, 64 Volodymyrs’ka, Kyiv, 01601, Ukraine
Denis O. Naumenko
Affiliation:
Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45 Nauki Prospect, Kyiv, 03650, Ukraine The Research Centre for Microsystems and Nanotechnology, Kaunas University of Technology, 65 Studentu, 51369, Kaunas, Lithuania
Irene Simkiene
Affiliation:
Semiconductor Physics Institute, 11 Gostauto, Vilnius, 01108, Lithuania
Valentinas Snitka
Affiliation:
The Research Centre for Microsystems and Nanotechnology, Kaunas University of Technology, 65 Studentu, 51369, Kaunas, Lithuania
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Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Keywords

porosityIII-Voptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1534: Symposium 6B – Low-Dimensional Semiconductor Structures , 2013 , pp. A99 - A104
Copyright
Copyright © Materials Research Society 2013 

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References

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