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Structural and Optical Features of Nano-Crystalline Silicon Films Prepared by Pecvd and Rf Magnetron Sputter Techniques

Published online by Cambridge University Press:  17 March 2011

M.-B. Park  and
N.-H. Cho
M.-B. Park
Affiliation:
Department of Materials Science and Engineering, Inha University, Inchon 402-751, Korea
N.-H. Cho
Affiliation:
Department of Materials Science and Engineering, Inha University, Inchon 402-751, Koreanhcho@inha.ac.kr
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Abstract

Nano-crystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD) and rf-magnetron sputter techniques at various deposition conditions, and the relations of the photoluminescence (PL) phenomena of the films with process variables are discussed. The phase of the films prepared at R.T. by PECVD techniques is somewhere between amorphous and crystalline states, consisting of nano-crystallites of size ranging from 3.2 to 5.3 nm. These films exhibit significant PL intensities near blue light region; the PL peaks shift from 510 to 460 nm with decreasing the reaction gas (SiH4) fraction from 4.7 to 2.0%. The films prepared at 500 °C by PECVD are composed of about 5 and 150 nm crystallites, exhibiting little PL phenomena. The PL intensity of the films prepared by sputter techniques was observed to increase with raising the sputter power and the post-deposition heat-treatment temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A23.3
Copyright
Copyright © Materials Research Society 2001

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References

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