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Structural and Mechanical Properties of Diamond-Like Carbon Films Prepared by Pulsed Laser Deposition With Varying Laser Intensity

Published online by Cambridge University Press:  10 February 2011

M. Bonelli ,
A. C. Ferrari ,
A. P. Fioravanti ,
A. Miotello  and
P. M. Ossi
M. Bonelli
Affiliation:
Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica, Università di Trento, 1-38050 Povo (TN), Italy
A. C. Ferrari
Affiliation:
Department of Engineering, Cambridge University, Cambridge, UK
A. P. Fioravanti
Affiliation:
Dipartimento di Ingegneria Nucleare, Politecnico di Milano, 1-20133 Milano, Italy
A. Miotello
Affiliation:
Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica, Università di Trento, 1-38050 Povo (TN), Italy
P. M. Ossi
Affiliation:
Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Ingegneria Nucleare, Politecnico di Milano, 1-20133 Milano, Italy
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Abstract

Diamond-like carbon (DLC) films have been prepared by pulsed laser deposition (PLD) (wavelength 248 nm), ablating highly oriented pyrolytic graphite (HOPG) at room temperature in a vacuum of 10−2Pa, at fluences between 0.5 and 35 Jcm−2. Films have been deposited on Si(100) with and without a SiC interlayer. Structural analysis, such as visible and UV Raman, Infrared and Electron Energy Loss (EEL) spectroscopies show that the films are hydrogen-free and undergo a transition, from mainly disordered graphitic to up to 80% tetrahedral amorphous carbon (ta-C), above a laser threshold fluence of 5 J cm−2. The measured residual stresses of as deposited ta-C films do not exceed 2 GPa. Scratch tests show excellent adhesion properties. Low friction coefficients (0.05-0.1) have been measured in ambient humidity. Nanoindentation indicates that film hardness is as high as 70 GPa

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 359
Copyright
Copyright © Materials Research Society 2000

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References

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