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Structural and Ferroelectric Properties of Large c/a Phase Bismuth Ferrite Thin Films Prepared by Ion Beam Sputtering

Published online by Cambridge University Press:  14 January 2011

Seiji Nakashima ,
Yosuke Tsujita ,
Hironori Fujisawa ,
Jung Min Park ,
Takeshi Kanashima ,
Masanori Okuyama  and
Masaru Shimizu
Seiji Nakashima
Affiliation:
Depattment of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167, Shosya, Himeji, Hyogo, 671–2280, Japan.
Yosuke Tsujita
Affiliation:
Depattment of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167, Shosya, Himeji, Hyogo, 671–2280, Japan.
Hironori Fujisawa
Affiliation:
Depattment of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167, Shosya, Himeji, Hyogo, 671–2280, Japan.
Jung Min Park
Affiliation:
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1–3, Machikaneyama-cho, Toyonaka, Osaka, 560–8531, Japan.
Takeshi Kanashima
Affiliation:
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1–3, Machikaneyama-cho, Toyonaka, Osaka, 560–8531, Japan.
Masanori Okuyama
Affiliation:
Institute for NanoScience Design, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
Masaru Shimizu
Affiliation:
Depattment of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167, Shosya, Himeji, Hyogo, 671–2280, Japan.
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Abstract

BiFeO3 (BFO) thin films have been deposited on SrRuO3/SrTiO3 (001) substrate by using ion beam sputtering process. At low oxygen partial pressure of 11 m Pa, rhombohedral and large c/a mixed phase thin film have been obtained in spite of rhombohedral BFO single phase formation at high oxygen partial pressure of 73 mPa. From wide area 2θ-Ψ mappings, diffraction peaks from large c/a phase BFO thin film were obtained with the same extinction rule as those of rhombohedral BFO. Reciprocal space mappings around BFO (003) and BFO (103) spots indicate that lattice parameters of large c/a phase BFO were a = 0.381 nm and c = 0.461 nm (c/a =1.22), respectively. Moreover ferroelectric domain switching could be observed in both of rhombohedral BFO and mixed phase BFO thin films.

Keywords

ion-beam processingferroelectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1292: Symposium K – Oxide Nanoelectronics , 2011 , mrsf10-1292-k03-04
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehland, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., Spaldin, N. A., Rabe, K. M., Wuttig, M., and Ramesh, R., Science 299, 1719 (2003).Google Scholar
2. Yun, K. Y., Ricinschi, D., Kanashima, T., Noda, M., and Okuyama, M., Appl. Phys. Lett. 89, 192902 (2006).Google Scholar
3. Lebeugle, D., Colson, D., Forget, A., Viret, M., Bonville, P., Marucco, J. F., and Fusil, S., Phys. Rev. B 76, 024116 (2007).Google Scholar
4. Lebeugle, D., Colson, D., Forget, A., and Viret, M., Appl. Phys. Lett. 91, 022907 (2007).Google Scholar
5. Zeches, R. J., Rossell, M. D., Zhang, J. X., Hatt, A. J., He, Q., Yang, C.-H., Kumar, A., Wang, C. H., Melville, A., Adamo, C., Sheng, G., Chu, Y.-H., Ihlefeld, J. F., Erni, R., Ederer, C., Gopalan, V., Chen, L. Q., Schlom, D. G., Spaldin, N. A., Martin, L. W., Ramesh, R.. Science 326, 977(2009).Google Scholar
6. Rcinschi, D., Yun, K. Y., and Okuyama, M., Ferroelectrics 335, 181(2006).Google Scholar
7. Béa, H., Dupé, B., Fusil, S., Mattana, R., Jacquet, E., Warot-Fonrose, B., Wilhelm, F., Rogalev, A., Petit, S., Cros, V., Anane, A., Petroff, F., Bouzehouane, K., Geneste, G., Dkhil, B., Lisenkov, S., Ponomareva, I., Bellaiche, L., Bibes, M., and Barthélémy, A., Phys. Rev. Lett., 102, 217603(2009).Google Scholar
8. Stuart, R. V., Wehner, G. K., J.Appl.Phys., 35, 1819(1964).Google Scholar
9. Nakashimaa, S., Tsujita, Y., Fujisawa, H., Park, J. M., Kanashima, T., Okuyama, M., and Shimizu, M., Current Appl. Phys. (accepted).Google Scholar