Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-16T19:04:00.975Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

T. Henkel ,
Y. Tanaka ,
N. Kobayashi ,
H. Tanoue ,
M. Gong ,
X. D. Chen ,
S. Fung  and
C. D. Beling
T. Henkel
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, henkel@)etl.go.jp
Y. Tanaka
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, henkel@)etl.go.jp
N. Kobayashi
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, henkel@)etl.go.jp
H. Tanoue
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, henkel@)etl.go.jp
M. Gong
Affiliation:
Physics Department, The University of Hong Kong, Hong Kong, China
X. D. Chen
Affiliation:
Physics Department, The University of Hong Kong, Hong Kong, China
S. Fung
Affiliation:
Physics Department, The University of Hong Kong, Hong Kong, China
C. D. Beling
Affiliation:
Physics Department, The University of Hong Kong, Hong Kong, China
Get access

Abstract

Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 117
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Troffer, T., Schadt, M., Frank, T., Itoh, H., Pensl, G., Heindl, J., Strunk, H.P., Maier, M., Phys. stat. sol. (a) 162, 277(1997).10.1002/1521-396X(199707)162:1<277::AID-PSSA277>3.0.CO;2-C3.0.CO;2-C>Google Scholar
2. Rao, M.V., Gardner, J.A., Chi, P.H., Holland, O.W., Kelner, G., Kretchmer, J. and Ghezzo, M., J. Appl. Phys. 81(10), 6635 (1997).10.1063/1.365236Google Scholar
3. Henkel, T., Tanaka, Y., Kobayashi, N., Koutzarov, I., Okumura, H., Yoshida, S. and Ohshima, T., Mat. Res. Soc. Symp. Proc. 512, 163(1998).10.1557/PROC-512-163Google Scholar
4. Gong, M., Fung, S., Beling, C.D., Brauer, G., Wirth, H. and Skorupa, W., J. Appl. Phys. 85(1) 105 (1998).10.1063/1.369428Google Scholar
5. Troffer, T., Pensl, G., Schoner, A., Henry, A., Hallin, C., Kordina, O., Janzen, E., Mater. Sci. Forum 264–268, 557 (1998).Google Scholar
6. Harris, G.L., Properties of Silicon Carbide, (INSPEC, London, 1995), pp.153.Google Scholar
7. Kalnin, A.A., Tairov, Y.M. and Yaskov, D.A., Sov. Phys. - Solid State 8(3), 755 (1966).Google Scholar
8. Maslakovets, Y.P., Mokhov, E.N., Vodakov, Y.A. and Lomakina, G.A., Sov. Phys. - Solid State 10(3), 634 (1968).Google Scholar
9. Marsh, O.J. and Dunlap, H.L., Rad. Eff. 6, 301(1970).10.1080/00337577008236310Google Scholar
10. Baranov, P.G., Mater. Sci. Forum 264–268, 581 (1998).Google Scholar
11. Ramungul, N., Zheng, Y., Patel, R., Khemka, V. and Chow, T.P., Mater. Sci. Forum 264–268, 1049 (1998).Google Scholar
12. Ramungul, N., Khemka, V., Zheng, Y., Patel, R. and Chow, T.P., IEEE Trans. Electron Devices 46(3), 465 (1999).10.1109/16.748863Google Scholar
13. Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703Google Scholar
14. Ziegler, J.F., Biersack, J.P., and Littmark, U., The Stopping and Range of Ions in Solids, (Pergamon, New York, 1985), pp. 1.Google Scholar
15. Heera, V., Skorupa, W., Mat. Res. Soc. Symp. Proc. 438, 241(1997).10.1557/PROC-438-241Google Scholar
16. Edmond, J.A., Palmour, J.W. and Davis, R.F., J. Electrochem. Soc. 133(3), 650 (1986).10.1149/1.2108638Google Scholar
17. Alok, D. and Baliga, B.J., J. Electron. Mater. 24(4), 311 (1995).10.1007/BF02659692Google Scholar
18. Reddy, C.V., Fung, S., and Beling, C. D., Rev. Sci. Instrum. 67(1), 257 (1996).10.1063/1.1147586Google Scholar
19. Chu, W. K., Mayer, J. W., and Nicolet, M. A., Backscattering Spectrometry, (Academic, New York, 1978), pp. 64.Google Scholar
20. Wirth, H., Anwand, W., Brauer, G., Voelskow, M., Panknin, D., Skorupa, W. and Coleman, P.G., Mater. Sci. Forum 264–268, 729 (1998).Google Scholar