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Structural and Electrical Investigations of Ferroelectric Lead Strontium Titanate Thin Films and Ceramics

Published online by Cambridge University Press:  01 February 2011

M. Jain ,
P. Bhattacharya ,
Yu. I. Yuzyuk ,
R. S. Katiyar  and
A. S. Bhalla
M. Jain
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931
P. Bhattacharya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931
Yu. I. Yuzyuk
Affiliation:
Faculty of Physics, Rostov State University, Zorge 5, Rostov-on-Don, 344090, Russia
R. S. Katiyar
Affiliation:
Faculty of Physics, Rostov State University, Zorge 5, Rostov-on-Don, 344090, Russia
A. S. Bhalla
Affiliation:
Materials Research Institute, The Pennsylvania State University, University Park, PA-16802, USA
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Abstract

Lead strontium titanate (PbxSr1-xTiO3) (x=0.3–1.0) ceramic targets were prepared by the conventional powder-processing method. Thin films of these compositions were deposited on platinized silicon substrates by pulsed laser deposition technique. X-ray diffraction studies of the ceramic targets showed that the lattice structure changes from tetragonal to cubic phase with the increase of Sr content in PbTiO3. Raman spectroscopic studies of PbxSr1-xTiO3 (PST) ceramics and thin films showed that the soft mode decreases to lower frequency and finally disappear at around 60–70 at% Sr content, which confirms the tetragonal to cubic phase transition at room temperature. Dielectric constant measured for PST thin films was in the range of 900–1500 at 1 MHz, with maximum value obtained for PST30 thin film. The loss tangents at room temperature were in the range of 0.07–0.1 for PST thin films with different compositions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.15
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Muller, K. A. and Burkard, H., Phys. Rev. B 19, 3593 (1979).Google Scholar
2. Nomura, S. and Sawada, S., J. Phys. Soc. Japan 10, 108 (1955).Google Scholar
3. Burns, G. and Scott, B.A., Phys. Rev. Lett. 25, 167 (1970).Google Scholar
4. Burn, G., Sanjurjo, J.A., and Lopez, C. E., Phys. Rev. B (30), 7170 (1984).Google Scholar
5. Fleury, P.A., Scott, J.F., Worlock, J. M. Phys. Rev. Lett 21, 16 (1968).Google Scholar
6. Chung, H. J., and Woo, S.I., J. Vac. Sci. Technol. B19, 275 (2001).Google Scholar
7. Chung, H. J., Chung, S.J., Kim, J.H., and Woo, S.I., Thin Solid Films 394, 213 (2001).Google Scholar
8. Martinez, E., Fundora, A., Blanco, O., Garcia, S., Heredia, E., and Siqueiros, J.M., Mat. Res. Soc. Symp. Proc. 688, C7.34.1 (2002).Google Scholar
9. Chou, C.C., Hou, C.S., Chang, G.C., and Cheng, H.F., Applied Surface Science 142, 413 (1999).Google Scholar
10. Kim, Y.K., Lee, K.S., and Baik, S., J. Mater. Res. 16, 2463 (2001).Google Scholar
11. Kang, D.H., Kim, J.H., Park, J.H., and Yoon, K.H., Mat. Res. Bull. 36, 265 (2001).Google Scholar
12. Jain, M., Guo, R., Bhalla, A.S., and Katiyar, R.S., Material Letters 56, 692 (2002).Google Scholar
13. Palkar, V.R., Purandare, S.C., Pai, S.P., Chattopadhyay, S., Apte, P.R., Pinto, R., and Multani, M.S., Appl. Phys. Lett. 68, 1582 (1996).Google Scholar
14. Shirane, G., Axe, J.D., Harada, J., Phys. Rev. B 2, 155 (1970).Google Scholar