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Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

Published online by Cambridge University Press:  10 February 2011

G. Sade ,
J. Pelleg  and
A. Grisaru
G. Sade
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
J. Pelleg
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
A. Grisaru
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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Abstract

The TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.

It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 277
Copyright
Copyright © Materials Research Society 1997

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References

1. Nicolet, M.-A., Thin Solid Films 52, 415 (1978).Google Scholar
2. Nicolet, M.-A. and Bartur, M., J. Vac. Sci. Technol. 19, 786 (1981).Google Scholar
3. Ting, C. Y. and Wittmer, M., Thin Solid Films 96, 327 (1982).Google Scholar
4. Wittmer, M., J. Vac. Sci. Technol. A2, 273 (1984).Google Scholar
5. Luby, S.. Majkova, E.. Jergel, M., Brunel, M., Leggieri, G., Luches, A., Majni, G., and Menqucci, , Thin Solid Films 277, 138 (1996).Google Scholar
6. Hoener, C.F., Pylant, E., Boden, E.G, and Wang, S.-Q., J.Vac. Sci. Tecnol. B12. 1394 (1994).Google Scholar
7. Dew, S., Smy, T., amd Brett, M., Jpn. J. Appl. Phys. 33, 1140 (1994).Google Scholar
8. Reid, J.S., Kolawa, E., Ruiz, R. P., and Nicolet, M.-A., Thin Solid Films 236, (1993).Google Scholar
9. Wang, Shi-Qing, MRS Bulletin 19(8), 30 (1994).Google Scholar
10. Hollec, H., J. Vac. Sci. Technol. A4(6), 2661 (1986).Google Scholar
11. Samsonov, G. V. and Vinitskii, L. M., Handbook of refractory compounds, (Plenum Press, New York, 1979).Google Scholar
12. Blom, H.-O., Larsson, T., Berg, S. and Ostling, M., J. Vac. Sci. 1. A7(2), 162 (1989).Google Scholar
13. Shappirio, J. R., Finnegan, J. J., Lux, R. A., J. Vac. Sci. Technol. B4(6), 1409 (1986).Google Scholar
14. Choi, C. S., Ruggles, G. A., Shah, A. S., Xing, G. C., Osburn, C. M., and Hunn, J. D., J. Electrochem. Soc. 138(10), 3062 (1991).Google Scholar
15. Sade, G. and Pelleg, J., Applied Surface Science 91, 263 (1995).Google Scholar
16. Choi, S., Wang, Q., Osburn, C. M., Ruggles, G. A., and Shah, A. S., IEEE Transactions on electron devices 39(10), 2341 (1992).Google Scholar
17. Sade, G., Pelleg, J., (Mater. Res. Soc. Symp. Proc. 402, Pittsburgh, PA 1996) 131.Google Scholar
18. Sade, G., Pelleg, J. and Ezersky, V., Microelectronic Engineering (1996) (in press).Google Scholar
19. Gas, P., Deline, V., d'Heurle, F. M., Michel, A., and Scilla, G., J. Appl. Phys. 60(5), 1634 (1986)Google Scholar
20. Setton, M. and Spiegel, J. Van der, J. Appl. Phys. 69(2), 994 (1991).Google Scholar
21. Maex, K., Mater. Sci. Eng. R11, 53 (1993).Google Scholar
22. Beyers, R. and Sinclair, R., J. Appl. Phys. 57(6), 5240 (1985).Google Scholar
23. Sze, S. M., Physics of Semiconductor Devices 2nd ed. (Wiley, New York, 1981) p.245–311.Google Scholar
24. Murarka, S. P., Silicides for VLSI application, (Academic Press, New York, 1983) p.15.Google Scholar