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Structural and Electrical Characteristics of Ternary Oxide SmGdO3 for Logic and Memory Devices

Published online by Cambridge University Press:  05 February 2014

Yogesh Sharma ,
Pankaj Misra  and
Ram S. Katiyar
Yogesh Sharma
Affiliation:
Department of Physics, University of Puerto Rico, PR-00936-8377, USA
Pankaj Misra
Affiliation:
Department of Physics, University of Puerto Rico, PR-00936-8377, USA
Ram S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, PR-00936-8377, USA
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Abstract

We report on the structural and electrical characteristics of bulk and thin film of ternary oxide SmGdO3. Bulk sample of SmGdO3 was prepared by pelletizing and sintering the calcined mixture of predetermined amount of Sm2O3 and Gd2O3 powders. The crystalline structure of the sample was studied by X-ray diffraction measurements and Raman spectroscopy. Capacitance and leakage current measurements on bulk sample revealed a high and linear dielectric constant of ∼ 19 with low dielectric loss and leakage current which is suitable for gate dielectric application in CMOS logic devices and high-k MIM capacitors. In addition, the non-volatile resistive memory switching phenomenon was studied in thin films of SmGdO3 which were deposited by pulsed laser deposition using sintered pellet of SmGdO3 as target. Commercially available Pt/TiO2/SiO2/(100) Si was used as substrate and top Pt electrode of lateral dimension 40×40μm2 were deposited by sputtering to construct Pt/SmGdO3/Pt MIM devices. After initial forming process which occurred at comparatively higher voltage, the Pt/SmGdO3/Pt devices showed repeatable unipolar switching between high and low resistance states with low and well defined switching voltages. These properties indicate suitability of this material for the emerging logic and memory device applications.

Keywords

dielectricRaman spectroscopyx-ray diffraction (XRD)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 111 - 116
Copyright
Copyright © Materials Research Society 2014 

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References

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