Skip to main content Accessibility help
×
Home

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

  • Shoko S. Ono (a1), Yasuhisa Kayaba (a1), Tsuneji Suzuki (a1), Kazuo Kohmura (a1) and Hirofumi Tanaka (a1)...

Abstract

Pore sealing has become a critical issue for the implementation of porous low-k dielectrics and for realizing acceptable reliability performance of the interconnect. This study focuses on fabrication of ultra-thin, conformal and plasma resistant pore seal layer and on understanding parameters playing a role in sealing the surfaces of porous low-k films. It was found that 2.5 nm-thick pore seal layer shows a perfect toluene seal property for the porous low-k film whose pore radius is 1.48 nm. The pore seal layer still show a good toluene seal property after irradiation of He plasma at 250°C for 10 sec. The increments of dielectric constant by applying the pore seal layer and by the He plasma irradiation for 10 sec are 0.04 and 0.03, respectively. Interestingly, all of toluene seal property, refractive index of the bottom part of the film and dielectric constant started to deteriorate after irradiation of He plasma for 20 sec. It was suggested that when toluene seal property degrades, plasma would start diffusing into pores and both refractive index of the bottom part of the film and k value start to increase.

    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films
      Available formats
      ×

Copyright

References

Hide All
1. Maex, K., Baklanov, M. R., Shamiryan, D., Iacopi, F., Brongersma, S. and Yanovitskaya, Z. Sh., J. Appl. Phys., 8793 (2003).
2. Elshocht, S. V., Delabie, A., Dewilde, S., Meersschaut, J., Swerts, J., Tielens, H., Verdonck, P., Witters, T., and Vancoille, E., ECS, 1839 (2011).
3. Chung, H., Chang, M., Chu, S., Kumar, N., Goto, K., Maity, N., Sankaranarayanan, S., Okamura, H., Ohtsuka, N., Ogawa, S., IEEE 454, 456, (2003).
4. Kim, H., Detavenier, C., van der Straten, O., Rossnagel, S. M., Kellock, A. J., and Park, D.-G., J. Appl. Phys. 98, 014308 (2005)
5. Caro, A. M., Maes, G., Borghs, G., and Whelan, C., Microelectron. Eng. 85(10), 20472050 (2008)
6. Gandhi, D. D., Lane, M., Zhou, Y., Singh, A. P., Nayak, S., Tisch, U., Eizenberg, M., and Ramanath, G., Nature 447(7142), 299–U292 (2007).
7. Ganesa, P. G., Singh, A. P., and Ramanath, G., Appl. Phys. Lett. 85(4), 579581 (2004).
8. Caro, A. M., Maes, G., Borghs, G., Armini, S., and Travaly, Y., Mater. Res. Soc. Symp. Proc. 1249-F02-01 (2010).
9. George, S. M., Yoon, B., and Dameron, A. A., Acc. Chem. Res. 42(4), 498508 (2009).
10. Loscutoff, P. W., Zhou, H., Clendenning, S. B., and Bent, S. F., ACS Nano 4(1), 331341 (2010).
11. Loscutoff, P. W., Clendenning, S. B., and Bent, S. F., Mater. Res. Soc. Symp. Proc. 1249-F02-03 (2010).
12. Iacopi, F., Zistl, C., Jehoul, C., Tokei, Zs., Lea, Q.T., Das, A., Sullivan, C., Prokopowicz, G., Gronbeck, D., Gallagher, M., Calvert, J., Maex, K., Microelectronic Engineering 64, 351, (2002).
13. Hijioka, K., Inoue, N., Kume, I., Kawahara, J., Furutake, N., Shirai, H., Itoh, T., Ogura, T., Kazama, K., Yamamoto, Y., Kasama, Y., Katsuyama, H., Manabe, K., Yamamoto, H., Saito, S., Hase, T., and Hayashi, Y., IEDM10–756.
14. Frot, T., Volksen, W., Purushothaman, S., Bruce, R., Dubois, G., Adv. Mater. 23, 2828 (2011).
15. Ono, S. S., Kohmura, K., Tanaka, H., Nakayama, K., Kagayama, A., Tsuchiya, T., Nakaura, M., Matsuoka, O., Takaki, T. and Maekawa, K., Mater. Res. Soc. Symp. Proc. 1249-F06-03 (2010).
16. Ono, S. S., Kohmura, K., Tanaka, H., Kayaba, Y., Kikkawa, T. Mater. Res. Soc. Symp. Proc. 1335, 21 (2011).
17. Ono, S. S., Kayaba, Y., Suzuki, T., Tanaka, H., Kohmura, K., Mater. Res. Soc. Symp. Proc. 1428, (2012).
18. Baklanov, M. R., Mogilnikov, K. P., Yim, J.-H., Mat. Res. Soc. Symp. Proc. 812, F5.4.1, (2004)

Keywords

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

  • Shoko S. Ono (a1), Yasuhisa Kayaba (a1), Tsuneji Suzuki (a1), Kazuo Kohmura (a1) and Hirofumi Tanaka (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed