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Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

Published online by Cambridge University Press:  10 February 2011

Y. Shimogaki ,
S. W. Lim ,
E. G. Loh ,
Y. Nakano ,
K. Tada  and
H. Komiyama
Y. Shimogaki
Affiliation:
Department of Metallurgy, University of Tokyo 7–3-1 Hongo, Bunkyo-ku, Tokyo 113–8656, JAPAN, shimo@dpe.mm.t.u-tokyo.ac.jp
S. W. Lim
Affiliation:
Department of Electrical Engineering, Stanford University
E. G. Loh
Affiliation:
Department of Chemical System Engineering, University of Tokyo
Y. Nakano
Affiliation:
Department of Electronic Engineering, University of Tokyo
K. Tada
Affiliation:
Division of Electrical & Computer Engineering, Yokohama National University
H. Komiyama
Affiliation:
Department of Chemical System Engineering, University of Tokyo
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Abstract

Low dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 255
Copyright
Copyright © Materials Research Society 1999

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