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Strongly (111) Oriented Metallization by Ion Plating Method

Published online by Cambridge University Press:  10 February 2011

T. Kudo ,
S. Sakuragi ,
S. Masui ,
K. Kinoshita ,
H. Makino  and
M. Tanaka
T. Kudo
Affiliation:
Research and Development Center, Sumitomo Heavy Industries, Ltd., 63-30, Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan, Tso_Kudo@shi.co.jp
S. Sakuragi
Affiliation:
Research and Development Center, Sumitomo Heavy Industries, Ltd., 63-30, Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
S. Masui
Affiliation:
Research and Development Center, Sumitomo Heavy Industries, Ltd., 63-30, Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
K. Kinoshita
Affiliation:
Research and Development Center, Sumitomo Heavy Industries, Ltd., 63-30, Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
H. Makino
Affiliation:
Research and Development Center, Sumitomo Heavy Industries, Ltd., 63-30, Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
M. Tanaka
Affiliation:
Research and Development Center, Sumitomo Heavy Industries, Ltd., 63-30, Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
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Abstract

We have succeeded in the synthesis of strong Cu(111) textured films by means of the novel ion plating method(URT-IP). This URT-IP method combines the Cu deposition with the surface cleaning (self-cleaning). In the Cu film synthesis, the cations play a main role: the self-cleaning of underlying Cu seed and TaN barrier surfaces at the first stage of Cu deposition and the promotion of (111) texture. The two growth processes dependent on underlying materials cause the strong (111) orientation; the epitaxial growth on the same (111) oriented underlayer and the promotion of thermodynamically stable (111) texture on the amorphous underlayer. The in-situ Ar+ cleaning of underlayer surfaces by the URT-IP improves the (11) orientation to be much stronger. The URT-IP method is applied also to the synthesis of strong Pt(111) textured films with the same fcc system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 205
Copyright
Copyright © Materials Research Society 2000

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References

1 Murarka, S.P., Hymes, S.W., Critical Reviews in Solid State Mater. Sci., 20, 87 (1995)10.1080/10408439508243732Google Scholar
2 Vaidya, S. and Shinha, A.F., Thin Solid Films 75, p253 (1981)10.1016/0040-6090(81)90404-1Google Scholar
3 Kageyama, M., Hashimoto, K. and Onoda, H., Proc. 29th IRPS, p97 (1991)Google Scholar
4 Ryu, C., Loke, A.L.S., Nogami, T. and Wong, S.S., Proc. 35th IRPS, p201 (1997)Google Scholar
5 Kegeyama, M., Abe, K., Harada, Y., and Onoda, H., MRS Symp. Proc. 514, p91 (1998)10.1557/PROC-514-91Google Scholar
6 Ueno, K., Sekiguchi, A. and Kobayashi, A., Proc. IITC, p119 (1998)Google Scholar
7 Kudo, T. et al. , CMP Technology for ULSI Interconnection, SEMICON West, pD–1 (1999)Google Scholar
8 Tanaka, M., Patent, U. S., No. 5667012 (1997)Google Scholar
9 Makino, H., Tanaka, M. and Awai, K., VMIC, 15, p75(1998)Google Scholar
10 Uramoto, J., Journal of the vacuum society of Japan, 25, p660 (1982) (in Japanese).10.3131/jvsj.25.660Google Scholar
11 Toyoda, H. et al. , Proc. 32th IRPS, p 178 (1994)Google Scholar