Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T15:23:28.667Z Has data issue: false hasContentIssue false
  • English
  • Français

Stresses in UHV Planar Magnetron Sputtered Films

Published online by Cambridge University Press:  22 February 2011

C Hudson  and
R. E. Somekh
C Hudson
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
R. E. Somekh
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
Get access

Abstract

A method has been developed to measure the stress in films which have been sputtered using a planar magnetron in a small-scale UHV chamber. The stress has been measured for diffent materials as a function of the sputtering gas pressure P and the substrate-target distance d. It is found that the stress in films of the same material deposited at different values of d is dependent only on the pressure-distance product (Pd), except at short (less than about 30mm) distances. The value of Pd required to produce a stress-free film is found to increase with the more extreme ratios between the atomic masses of the film material and the sputtering gas for the case of metals. However, the required Pd product is higher for the case of amorphous semiconductors. The stress in alloy films is also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 145
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Imamura, T., Fujitsu Sci. Technol. Journal 22, 1 (1991)Google Scholar
2. Thornton, J. A. and Hoffman, D. W., J. Vac. Sci. Technol. 14. 164 (1977)Google Scholar
3. Thornton, J.A., J. Vac. Sci. Technol. 11, 666(1974)CrossRefGoogle Scholar
4. Hoffman, D.W., Proc. 7th ICVM, Tokyo 145(1982)Google Scholar
5. Cadieu, F. J. and Chencinski, N., IEEE Trans. Magnet. MAGII. 227 (1975)CrossRefGoogle Scholar
6. Westwood, W. D., J. Vac. Sci. Technol. 15, 1 (1978)Google Scholar
7. Somekh, R. E., J. Vac. Sci. A 2, 1285 (1984)Google Scholar
8. Somekh, R. E., Vacuum 34, 987 (1984)Google Scholar
9. Motohiro, T., Ph.D.Thesis, Tokyo University, 1985 Google Scholar
10. Vink, T. J. and van Zon, J. B. D., J. Vac. Sci. A 9, 124 (1991)Google Scholar
11. Somekh, R. E. and Barber, Z. H., J. Phys. E, 21, 1029 (1988)Google Scholar
12. Thornton, J. A. and Hoffman, D. W., J. Vac. Sci. A 3, 576 (1985)Google Scholar