Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-05-05T22:45:21.229Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress In Molybdenum Films Used For Fea Display Technology

Published online by Cambridge University Press:  15 February 2011

James A. Greer  and
Guy F. Pagliuca
James A. Greer
Affiliation:
Raytheon Company – Research Division, Lexington, MA
Guy F. Pagliuca
Affiliation:
Raytheon Company – Research Division, Lexington, MA
Get access

Abstract

Flat-panel displays based on cold-cathode field emission are actively being developed in a number of laboratories world-wide. Once fully developed, Field Emitter Displays (FEDs) will compete directly with Liquid Crystal Displays (LCDs). FEDs offer several significant advantages over LCDs including higher screen brightness, wider viewing angle, lower power consumption, and operation over a broader temperature range, making FEDs desirable for applications such as lap-top computers. Presently, several materials are being evaluated for use as coldcathode field emitters including molybdenum1, silicon2, and DLC3. At this time it is unclear which material (or materials) will ultimately be incorporated into commercial or military flatpanel display products. Each potential cathode material has its own set of advantages and disadvantages, and the ultimate choice will depend on the particular display requirements and architecture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 323
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Spindt, C.A., Holland, C.E., Rosengreen, A., and Brodie, I., IEEE Trans. on Electron Devices, Vol.38(10), pps. 2355–2363, 1991.Google Scholar
2) Hunt, C.E., Trujillo, J.T., and Orvis, W.J., IEEE Trans. on Electron Devices, Vol.38(10), pps. 2309-2313, 1991.Google Scholar
3) Djuba, B.C. and Chubun, N.N., Trans. on Electron Devices, Vol.38(10), pps. 2314–2316, 1991.Google Scholar
4) Ghis, A., Meyer, R., Rambaud, P., Levy, F., and Leroux, T., IEEE Trans. on Electron Devices, Vol.38(10), pps. 2320–2322, 1991.Google Scholar
5) Sun, S., J. Vac. Sci. Technol., A 4(3), pps. 572–576, 1986.Google Scholar
6) Hoffman, D.W. and Thornton, J.A., J. Vac Sci. Technol., Vol.16(2), pps. 134–137, 1979.Google Scholar
7) Thornton, J.A. and Hoffman, D.W., Thin Solid Films, Vol.171, pp. 5, 1989.Google Scholar